Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Toxicity and imaging of multi-walled carbon nanotubes in human macrophage cells.

Multi-walled carbon nanotubes (MWNTs) have been proposed for use in many applications and concerns about their potential effect on human health have led to the interest in understanding the interactions between MWNTs and human cells. One important technique is the visualisation of the intracellular distribution of MWNTs. We exposed human macrophage cells to unpurified MWNTs and found that a decrease in cell viability was correlated with uptake of MWNTs due to mainly necrosis. Cells treated with purified MWNTs and the main contaminant Fe(2)O(3) itself yielded toxicity only from the nanotubes and not from the Fe(2)O(3). We used 3-D dark-field scanning transmission electron microscopy (DF-STEM) tomography of freeze-dried whole cells as well as confocal and scanning electron microscopy (SEM) to image the cellular uptake and distribution of unpurified MWNTs. We observed that unpurified MWNTs entered the cell both actively and passively frequently inserting through the plasma membrane into the cytoplasm and the nucleus. These suggest that MWNTs may cause incomplete phagocytosis or mechanically pierce through the plasma membrane and result in oxidative stress and cell death.

Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were grown at temperatures as low as 120degreesC by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C2H2/NH3 system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices. (C) 2003 American Institute of Physics.