Wear of hardfacing white cast irons by solid particle erosion

The response of three commercial weld-hardfacing alloys to erosive wear has been studied. These were high chromium white cast irons, deposited by an open-arc welding process, widely used in the mineral processing and steelmaking industries for wear protection. Erosion tests were carried out with quartz sand, silicon carbide grit and blast furnace sinter of two different sizes, at a velocity of 40 m s-1 and at impact angles in the range 20° to 90°. A monolithic white cast iron and mild steel were also tested for comparison. Little differences were found in the wear rates when silica sand or silicon carbide grit was used as the erodent. Significant differences were found, however, in the rankings of the materials. Susceptibility to fracture of the carbide particles in the white cast irons played an important role in the behaviour of the white cast irons. Sinter particles were unable to cause gross fracture of the carbides and so those materials with a high volume fraction of carbides showed the greatest resistance to erosive wear. Silica and silicon carbide were capable of causing fracture of the primary carbides. Concentration of plastic strain in the matrix then led to a high wear rate for the matrix. At normal impact with silica or silicon carbide erodents mild steel showed a greater resistance to erosive wear than these alloys. © 1995.

Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

High efficiency liquid crystal lasers giving "white light" emission from arrays and flexible substrates

The self-organization of the helical structure of chiral nematic liquid crystals combined with their sensitivity to electric fields makes them particularly interesting for low-threshold, wavelength tunable laser devices. We have studied these organic lasers in detail, ranging from the influence specific macroscopic properties, such as birefringence and order parameter, have on the output characteristics, to practical systems in the form of two-dimensional arrays, double-pass geometries and paintable lasers. Furthermore, even though chiral nematics are responsive to electric fields there is no facile means by which the helix periodicity can be adjusted, thereby allowing laser wavelength tuning, without adversely affecting the optical quality of the resonator. Therefore, in addition to studying the liquid crystal lasers, we have focused on finding a novel method with which to alter the periodicity of a chiral nematic using electric fields without inducing defects and degrading the optical quality factor of the resonator. This paper presents an overview of our research, describing (i) the correlation between laser output and material properties,(ii) the importance of the gain medium,(iii) multicolor laser arrays, and (iv) high slope efficiency (>60%) silicon back-plane devices. Overall we conclude that these materials have great potential for use in versatile organic laser systems.

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells

This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.