Energy recovery from high-frequency clocks using DC-DC converters

Large digital chips use a significant amount of energy to distribute a multi-GHz clock. By discharging the clock network to ground every cycle, the energy stored in this large capacitor is wasted. Instead, the energy can be recovered using an on-chip DC-DC converter. This paper investigates the integration of two DC-DC converter topologies, boost and buck-boost, with a high-speed clock driver. The high operating frequency significantly shrinks the required size of the L and C components so they can be placed on-chip; typical converters place them off-chip. The clock driver and DC-DC converter are able to share the entire tapered buffer chain, including the widest drive transistors in the final stage. To achieve voltage regulation, the clock duty cycle must be modulated; implying only single-edge-triggered flops should be used. However, this minor drawback is eclipsed by the benefits: by recovering energy from the clock, the output power can actually exceed the additional power needed to operate the converter circuitry, resulting in an effective efficiency greater than 100%. Furthermore, the converter output can be used to operate additional power-saving features like low-voltage islands or body bias voltages. ©2008 IEEE.

Electromagnetic-thermal design optimization of the brushless doubly fed induction generator

In view of its special features, the brushless doubly fed induction generator (BDFIG) shows high potentials to be employed as a variable-speed drive or wind generator. However, the machine suffers from low efficiency and power factor and also high level of noise and vibration due to spatial harmonics. These harmonics arise mainly from rotor winding configuration, slotting effects, and saturation. In this paper, analytical equations are derived for spatial harmonics and their effects on leakage flux, additional loss, noise, and vibration. Using the derived equations and an electromagnetic-thermal model, a simple design procedure is presented, while the design variables are selected based on sensitivity analyses. A multiobjective optimization method using an imperialist competitive algorithm as the solver is established to maximize efficiency, power factor, and power-to-weight ratio, as well as to reduce rotor spatial harmonic distortion and voltage regulation simultaneously. Several constraints on dimensions, magnetic flux densities, temperatures, vibration level, and converter voltage and rating are imposed to ensure feasibility of the designed machine. The results show a significant improvement in the objective function. Finally, the analytical results of the optimized structure are validated using finite-element method and are compared to the experimental results of the D180 frame size prototype BDFIG. © 1982-2012 IEEE.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

In vivo regulation of the Vi antigen in Salmonella and induction of immune responses with an in vivo-inducible promoter.

Salmonella enterica serovar Typhi, the agent of typhoid fever in humans, expresses the surface Vi polysaccharide antigen that contributes to virulence. However, Vi expression can also be detrimental to some key steps of S. Typhi infectivity, for example, invasion, and Vi is the target of protective immune responses. We used a strain of S. Typhimurium carrying the whole Salmonella pathogenicity island 7 (SPI-7) to monitor in vivo Vi expression within phagocytic cells of mice at different times after systemic infection. We also tested whether it is possible to modulate Vi expression via the use of in vivo-inducible promoters and whether this would trigger anti-Vi antibodies through the use of Vi-expressing live bacteria. Our results show that Vi expression in the liver and spleen is downregulated with the progression of infection and that the Vi-negative population of bacteria becomes prevalent by day 4 postinfection. Furthermore, we showed that replacing the natural tviA promoter with the promoter of the SPI-2 gene ssaG resulted in sustained Vi expression in the tissues. Intravenous or oral infection of mice with a strain of S. Typhimurium expressing Vi under the control of the ssaG promoter triggered detectable levels of all IgG subclasses specific for Vi. Our work highlights that Vi is downregulated in vivo and provides proof of principle that it is possible to generate a live attenuated vaccine that induces Vi-specific antibodies after single oral administration.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.