Nanowire and graphene architectures for room temperature THz detection

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10-11 W/Hz1/2, and high-speed response. © 2012 IEEE.

Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.