Self-aligned, gated arrays of individual nanotube and nanowire emitters

We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.

High current density nanofilament cathodes for microwave amplifiers

The fabrication of high current density nanofilament cathodes for microwave amplifiers was discussed. Metallic nanowires grown on silicon wafers and carbon nanotubes/nanofibers grown by catalytic plasma enhanced chemical vapor deposition (PECVD) were the two types of nanofilament arrays analyzed as cathodes materials. It was observed that the arrays of 5.8 μm height and 50 nm diameter carbon nanotubes exhibited geometrical enhancement factor of 240+-7.5%. The results show that carbon nanotubes/nanofibers arrays are best suited for nanofilament cathodes.