Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

A rhetorical approach to IT diffusion: reconceptualizing the ideology-framing relationship in computerization movements

In this paper we propose rhetoric as a valuable yet underdeveloped alternative paradigm for examining IT diffusion. Building on recent developments of computerization movements theory, our rhetorical approach proposes that two central elements of the theory, framing and ideology, rather than being treated as separate can be usefully integrated. We suggest that IT diffusion can be usefully explored through examining the interrelationship of the deep structures underlying ideology and the type and sequence of rhetorical claims underpinning actors’ framing strategies. Our theoretical developments also allow us to better understand competing discourses influencing the diffusion process. These discourses reflect the ideologies and shape the framing strategies of actors in the broader field context. We illuminate our theoretical approach by drawing on the history of the diffusion of free and open source software.

A matter of life and death: sociomateriality, information systems and critical care

Sociomateriality has been attracting growing attention in the Organization Studies and Information Systems literatures since 2007, with more than 140 journal articles now referring to the concept. Over 80 percent of these articles have been published since January 2011 and almost all cite the work of Orlikowski (2007, 2010; Orlikowski and Scott 2008) as the source of the concept. Only a few, however, address all of the notions that Orlikowski suggests are entailed in sociomateriality, namely materiality, inseparability, relationality, performativity, and practices, with many employing the concept quite selectively. The contribution of sociomateriality to these literatures is, therefore, still unclear. Drawing on evidence from an ongoing study of the adoption of a computer-based clinical information system in a hospital critical care unit, this paper explores whether the notions, individually and collectively, offer a distinctive and coherent account of the relationship between the social and the material that may be useful in Information Systems research. It is argued that if sociomateriality is to be more than simply a label for research employing a number of loosely related existing theoretical approaches, then studies employing the concept need to pay greater attention to the notions entailed in it and to differences in their interpretation.

A trichordal temporal approach to digital coordination: the sociomaterial mangling of the CERN grid

This paper develops a sociomaterial perspective on digital coordination. It extends Pickering’s mangle of practice by using a trichordal approach to temporal emergence. We provide new understanding as to how the nonhuman and human agencies involved in coordination are embedded in the past, present, and future. We draw on an in-depth field study conducted between 2006 and 2010 of the development, introduction, and use of a computing grid infrastructure by the CERN particle physics community. Three coordination tensions are identified at different temporal dimensions, namelyobtaining adequate transparency in the present, modeling a future infrastructure, and the historical disciplining of social and material inertias. We propose and develop the concept of digital coordination, and contribute a trichordal temporal approach to understanding the development and use of digital infrastructure as being orientated to the past and future while emerging in the present.