209 resultados para VERTICAL-CHANNEL

em Cambridge University Engineering Department Publications Database


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A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

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Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology offer the potential for low cost deployment and maintenance compared with conventional wired sensor networks, enabling effective and efficient condition monitoring of aged civil engineering infrastructure. We will address wireless propagation for a below to above ground scenario where one of the wireless nodes is located in a below ground fire hydrant chamber to permit monitoring of the local water distribution network. Frequency Diversity (FD) is one method that can be used to combat the damaging effects of multipath fading and so improve the reliability of radio links. However, no quantitative investigation concerning the potential performance gains from the use of FD at 2.4GHz is available for the outlined scenario. In this paper, we try to answer this question by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor nodes. These measurement results are also compared with those obtained from simulations that employ our Modified 2D Finite-Difference Time-Domain (FDTD) approach. ©2009 IEEE.

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Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

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A 4Gbit/s directly modulated DBR laser is demonstrated with nanometre scale thermal tuning over an extended 20-70°C temperature range. >40dB side mode suppression over the entire temperature range is achieved. © 2005 Optical Society of America.

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Coupled-cavity passive harmonic mode-locking of a quantum well based vertical-external-cavity surface-emitting laser has been demonstrated, yielding an output pulse train of 1.5 ps pulses at a repetition rate of 80 GHz and with an average power of 80 mW. Harmonic mode-locking results from coupling between the main laser cavity and a cavity formed within the substrate of the saturable absorber structure. Mode-locking on the second harmonic of the substrate cavity allows a train of 1.1 ps pulses to be generated at a repetition rate of 147 GHz with 40 mW average power. © 2010 American Institute of Physics.

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The separation of independent sources from mixed observed data is a fundamental and challenging problem. In many practical situations, observations may be modelled as linear mixtures of a number of source signals, i.e. a linear multi-input multi-output system. A typical example is speech recordings made in an acoustic environment in the presence of background noise and/or competing speakers. Other examples include EEG signals, passive sonar applications and cross-talk in data communications. In this paper, we propose iterative algorithms to solve the n × n linear time invariant system under two different constraints. Some existing solutions for 2 × 2 systems are reviewed and compared.

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A full-scale experimental study on the structural performance of load-bearing wall panels made of cold-formed steel frames and boards is presented. Six different types of C-channel stud, a total of 20 panels with one middle stud and 10 panels with two middle studs were tested under vertical compression until failure. For panels, the main variables considered are screw spacing (300 mm, 400 mm, or 600 mm) in the middle stud, board type (oriented strand board - OSB, cement particle board - CPB, or calcium silicate board - CSB), board number (no sheathing, one-side sheathing, or two-side sheathing), and loading type (1, 3, or 4-point loading). The measured load capacity of studs and panels agrees well with analytical prediction. Due to the restraint by rivet connections between stud and track, the effective length factor for the middle stud and the side stud in a frame (unsheathed panel) is reduced to 0.90 and 0.84, respectively. The load carrying capacity of a stud increases significantly whenever one- or two-side sheathing is used, although the latter is significantly more effective. It is also dependent upon the type of board used. Whereas panels with either OSB or CPB boards have nearly identical load carrying capacity, panels with CSB boards are considerably weaker. Screw spacing affects the load carrying capacity of a stud. When the screw spacing on the middle stud in panels with one-side sheathing is reduced from 600 mm to 300 mm, its load carrying capacity increases by 14.5 %, 20.6% and 94.2% for OSB, CPB and CSB, respectively.