Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Performance of a Boundary Layer Ingesting (BLI) propulsion system

This paper presents an assessment of the performance of an embedded propulsion system in the presence of distortion associated with boundary layer ingestion. For fan pressure ratios of interest for civil transports, the benefits of boundary layer ingestion are shown to be very sensitive to the magnitude of fan and duct losses. The distortion transfer across the fan, basically the comparison of the stagnation pressure non-uniformity downstream of the fan to that upstream of the fan, has a major role in determining the impact of boundary layer ingestion on overall fuel burn. This, in turn, puts requirements on the fidelity with which one needs to assess the distortion transfer, and thus the type of models that need to be used in such assessment. For the three-dimensional distortions associated with fuselage boundary layers ingested into a subsonic diffusing inlet, it is found that boundary layer ingestion can provide decreases in fuel burn of several per cent. It is also shown that a promising avenue for mitigating the risks (aerodynamic as well as aeromechanical) in boundary layer ingestion is to mix out the flow before it reaches the engine face.