On the photoluminescence of a-C:H films

a-C:H films deposited from methane and helium mixture in a capacitively coupled rf plasma were found to show photoluminescence (PL) with peak intensities at energies far above the Taue gap of these films. Apart from the PL the films were investigated with respect to their IR and UV/VIS absorption properties as well as their Raman spectra were examined. The ultraviolet (UV) and blue luminescence from hard a-C:H thin films are explained by incorporation of polycyclic hydrocarbons from gas-phase reactions in the methane helium plasma into the film.

Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopy

In the present study, we report the hydrogen content estimation of the hydrogenated amorphous carbon (a-C:H) films using visible Raman spectroscopy in a fast and nondestructive way. Hydrogenated diamondlike carbon films were deposited by the plasma enhanced chemical vapor deposition, plasma beam source, and integrated distributed electron cyclotron resonance techniques. Methane and acetylene were used as source gases resulting in different hydrogen content and sp2/sp3 fraction. Ultraviolet-visible (UV-Vis) spectroscopic ellipsometry (1.5-5 eV) as well as UV-Vis spectroscopy were provided with the optical band gap (Tauc gap). The sp2/sp3 fraction and the hydrogen content were independently estimated by electron energy loss spectroscopy and elastic recoil detection analysis-Rutherford back scattering, respectively. The Raman spectra that were acquired in the visible region using the 488 nm line shows the superposition of Raman features on a photoluminescence (PL) background. The direct relationship of the sp2 content and the optical band gap has been confirmed. The difference in the PL background for samples of the same optical band gap (sp2 content) and different hydrogen content was demonstrated and an empirical relationship between the visible Raman spectra PL background slope and the corresponding hydrogen content was extracted. © 2004 American Institute of Physics.

Carbon onions: Carriers of the 217.5 nm interstellar absorption feature

The UV-VIS characteristics of carbon ions fabricated by an arch discharge in water or liquid nitrogen show characteristics that are similar to the interstellar absorption feature. Thus, high purity and well separated carbon onion samples prepared by annealing the as-fabricated powder in air at 600°C for 60 showed a constant absorption peak at 4.6 μm-1 with a variable width ranging from 1.2-1.6 μm-1. In addition to the UV-VIS data, the origin of the absorption feature at 4.6 μm-1 in carbon onions can be attributed to the collective excitations of π plasmons.

Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.

Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.