Spectroscopy of neutron-rich Dy168,170: Yrast band evolution close to the NpNn valence maximum

The yrast sequence of the neutron-rich dysprosium isotope Dy168 has been studied using multinucleon transfer reactions following collisions between a 460-MeV Se82 beam and an Er170 target. The reaction products were identified using the PRISMA magnetic spectrometer and the γ rays detected using the CLARA HPGe-detector array. The 2+ and 4+ members of the previously measured ground-state rotational band of Dy168 have been confirmed and the yrast band extended up to 10+. A tentative candidate for the 4+→2+ transition in Dy170 was also identified. The data on these nuclei and on the lighter even-even dysprosium isotopes are interpreted in terms of total Routhian surface calculations and the evolution of collectivity in the vicinity of the proton-neutron valence product maximum is discussed. © 2010 The American Physical Society.

The effect of Ln(III)/An(III) separation on TRU multi-recycling in CONFU assembly

This work examines the basic feasibility of the net-zero-balance TRU multi-recycling concept in which trivalent lanthanide fission products (Ln(III) ) are not separated from trivalent actinides (An(III)). The TRU together with Eu and Gd isotopes are recycled in a standard PWR using Combined Non-Fertile and UO2 (CONFU) assembly design. The assembly assumes a heterogeneous structure where about 20% of U02 fuel pins on the assembly periphery are replaced with Inert Matrix Fuel (IMF) pins hosting TRU, Gd, and Eu generated in the previous cycles. The 2-D neutronic analysis show potential feasibility of Ln / An recycling in PWR using CONFU assembly. Recycling of Ln reduces the fuel cycle length by about 30 effective full power days (EFPD) and TRU destruction efficiency by about 5%. Power peaking factors and reactivity feedback coefficients are close to those of CONFU assembly without Ln recycling.

Dopant compensation in HfO2 and other high K oxides

The theory of doping limits in semiconductors and insulators is applied to the case of wide gap oxides, crystalline, or amorphous, and used to explain that impurities do not in general give rise to gap states or a doping response. Instead, the system tends to form defect complexes or undergo symmetry-lowering reconstructions to expel gap states out of the band gap. The model is applied to impurities, such as trivalent metals, carbon, N, P, and B, in HfO2, the main gate dielectric used in field effect transistors. © 2014 AIP Publishing LLC.