12 resultados para Three-Level Inverter

em Cambridge University Engineering Department Publications Database


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We solve the problem of steering a three-level quantum system from one eigen-state to another in minimum time and study its possible extension to the time-optimal control problem for a general n-level quantum system. For the three-level system we find all optimal controls by finding two types of symmetry in the problem: ℤ2 × S3 discrete symmetry and S1 continuous symmetry, and exploiting them to solve the problem through discrete reduction and symplectic reduction. We then study the geometry, in the same framework, which occurs in the time-optimal control of a general n-level quantum system. © 2007 IEEE.

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We solve the problem of steering a three-level quantum system from one eigen-state to another in minimum time and study its possible extension to the time-optimal control problem for a general n-level quantum system. For the three-level system we find all optimal controls by finding two types of symmetry in the problems: ℤ × S3 discrete symmetry and 51 continuous symmetry, and exploiting them to solve the problem through discrete reduction and symplectic reduction. We then study the geometry, in the same framework, which occurs in the time-optimal control of a general n-level quantum system. Copyright ©2007 Watam Press.

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In application of the Balancing Domain Decomposition by Constraints (BDDC) to a case with many substructures, solving the coarse problem exactly becomes the bottleneck which spoils scalability of the solver. However, it is straightforward for BDDC to substitute the exact solution of the coarse problem by another step of BDDC method with subdomains playing the role of elements. In this way, the algorithm of three-level BDDC method is obtained. If this approach is applied recursively, multilevel BDDC method is derived. We present a detailed description of a recently developed parallel implementation of this algorithm. The implementation is applied to an engineering problem of linear elasticity and a benchmark problem of Stokes flow in a cavity. Results by the multilevel approach are compared to those by the standard (two-level) BDDC method.

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In this article, we detail the methodology developed to construct arbitrarily high order schemes - linear and WENO - on 3D mixed-element unstructured meshes made up of general convex polyhedral elements. The approach is tailored specifically for the solution of scalar level set equations for application to incompressible two-phase flow problems. The construction of WENO schemes on 3D unstructured meshes is notoriously difficult, as it involves a much higher level of complexity than 2D approaches. This due to the multiplicity of geometrical considerations introduced by the extra dimension, especially on mixed-element meshes. Therefore, we have specifically developed a number of algorithms to handle mixed-element meshes composed of convex polyhedra with convex polygonal faces. The contribution of this work concerns several areas of interest: the formulation of an improved methodology in 3D, the minimisation of computational runtime in the implementation through the maximum use of pre-processing operations, the generation of novel methods to handle complex 3D mixed-element meshes and finally the application of the method to the transport of a scalar level set. © 2012 Global-Science Press.

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In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thyristor (GCT) under inductive switching conditions. The simulations are validated by extensive experimental measurements. To the authors' knowledge such a complex simulation domain has not been used so far. This method allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors (GTOs) and Phase Control Thyristors (PCTs). The model captures complex phenomena, such as current filamentation including subsequent failure, which allow us to predict the Maximum Controllable turn-off Current (MCC) and the Safe Operating Area (SOA) previously impossible using 2D distributed models. © 2012 IEEE.

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In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.

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This paper presents an investigation into the losses in a three-phase induction motor under different pulse width modulation (PWM) excitation conditions. The impacts of Sinusoidal PWM, Space Vector PWM and Discontinuous PWM on machine loss are compared and studied. Finite element analysis simulations are employed to predict the machine losses with the loss breakdown analysis under different PWM schemes. Direct Calorimetric measurements are utilized to verify the finite element modeling and provide direct quantifications of machine loss under modern PWM techniques. © 2008 IEEE.

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Growing environmental concerns caused by natural resource depletion and pollution need to be addressed. One approach to these problems is Sustainable Development, a key concept for our society to meet present as well as future needs worldwide. Manufacturing clearly has a major role to play in the move towards a more sustainable society. However it appears that basic principles of environmental sustainability are not systematically applied, with practice tending to focus on local improvements. The aim of the work presented in this paper is to adopt a more holistic view of the factory unit to enable opportunities for wider improvement. This research analyses environmental principles and industrial practice to develop a conceptual manufacturing ecosystem model as a foundation to improve environmental performance. The model developed focuses on material, energy and waste flows to better understand the interactions between manufacturing operations, supporting facilities and surrounding buildings. The research was conducted in three steps: (1) existing concepts and models for industrial sustainability were reviewed and environmental practices in manufacturing were collected and analysed; (2) gaps in knowledge and practice were identified; (3) the outcome is a manufacturing ecosystem model based on industrial ecology (IE). This conceptual model has novelty in detailing IE application at factory level and integrating all resource flows. The work is a base on which to build quantitative modelling tools to seek integrated solutions for lower resource input, higher resource productivity, fewer wastes and emissions, and lower operating cost within the boundary of a factory unit. © 2012 Elsevier Ltd. All rights reserved.

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The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

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Image-based (i.e., photo/videogrammetry) and time-of-flight-based (i.e., laser scanning) technologies are typically used to collect spatial data of infrastructure. In order to help architecture, engineering, and construction (AEC) industries make cost-effective decisions in selecting between these two technologies with respect to their settings, this paper makes an attempt to measure the accuracy, quality, time efficiency, and cost of applying image-based and time-of-flight-based technologies to conduct as-built 3D reconstruction of infrastructure. In this paper, a novel comparison method is proposed, and preliminary experiments are conducted. The results reveal that if the accuracy and quality level desired for a particular application is not high (i.e., error < 10 cm, and completeness rate > 80%), image-based technologies constitute a good alternative for time-of-flight-based technologies and significantly reduce the time and cost needed for collecting the data on site.