Parameters identification by a single point free response measurement

When a thin rectangular plate is restrained on the two long edges and free on the remaining edges, the equivalent stiffness of the restraining joints can be identified by the order of the natural frequencies obtained using the free response of the plate at a single location. This work presents a method to identify the equivalent stiffness of the restraining joints, being represented as simply supporting the plate but elastically restraining it in rotation. An integral transform is used to map the autospectrum of the free response from the frequency domain to the stiffness domain in order to identify the equivalent torsional stiffness of the restrained edges of the plate and also the order of natural frequencies. The kernel of the integral transform is built interpolating data from a finite element model of the plate. The method introduced in this paper can also be applied to plates or shells with different shapes and boundary conditions. © 2011 Elsevier Ltd. All rights reserved.

Thin film monitoring with silicon bulk acoustic resonators

Abstract-This paper reports a single-crystal silicon mass sensor based on a square-plate resonant structure excited in the wine glass bulk acoustic mode at a resonant frequency of 2.065 MHz and an impressive quality factor of 4 million at 12 mtorr pressure. Mass loading on the resonator results in a linear downshift in the resonant frequency of this device, wherein the measured sensitivity is found to be 175 Hz cm2/μg. The silicon resonator is embedded in an oscillator feedback loop, which has a short-term frequency stability of 3 mHz (approximately 1.5 ppb) at an operating pressure of 3.2 mtorr, corresponding to an equivalent mass noise floor of 17 pg/cm2. Possible applications of this device include thin film monitoring and gas sensing, with the potential added benefits of scalability and integration with CMOS technology. © 2008 IEEE.

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.