75 resultados para Thermodynamic aspects of phase transition

em Cambridge University Engineering Department Publications Database


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The increasing use of renewable energy technologies for electricity generation, many of which have an unpredictably intermittent nature, will inevitably lead to a greater need for electricity storage. Although there are many existing and emerging storage technologies, most have limitations in terms of geographical constraints, high capital cost or low cycle life, and few are of sufficient scale (in terms of both power and storage capacity) for integration at the transmission and distribution levels. This paper is concerned with a relatively new concept which will be referred to here as Pumped Thermal Electricity Storage (PTES), and which may be able to make a significant contribution towards future storage needs. During charge, PTES makes use of a high temperature-ratio heat pump to convert electrical energy into thermal energy which is stored as ‘sensible heat’ in two thermal reservoirs, one hot and one cold. When required, the thermal energy is then converted back to electricity by effectively running the heat pump backwards as a heat engine. The paper focuses on thermodynamic aspects of PTES, including energy and power density, and the various sources of irreversibility and their impact on round-trip efficiency.

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We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

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We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

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Superradiance (SR), or cooperative spontaneous emission, has been predicted by R. Dicke before the invention of the laser. During the last few years one can see a renaissance of both experimental and theoretical studies of the superradiant phase transition in a variety of media, ranging from quantum dots and Bose condensates through to black holes. Until recently, despite of many years of research, SR has been considered as a phenomenon of pure scientific interest without obvious potential applications. However, recent investigations of the femtosecond SR emission generation from semiconductors have opened up some practical opportunities for the exploitation of this quantum optics phenomenon. Here we present a brief review of some features, advantages and potential applications of the SR generation from semiconductor laser structures

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Liquid crystal on silicon (LCOS) for phase-only holography is ideally made to better optical tolerance than that for conventional amplitude modulating applications. Die-level assembly is suited to custom devices and pre-production prototypes because of its flexibility and efficiency in conserving the silicon backplane. Combined with automated assembly, it will allow high reproducibility and fast turnaround time, paving the way for pre-production testing and customer sampling before mass production. Pre-assembly optical testing is the key element in the process. By taking into account the flatness of both the backplane and the front glass plate, we have assembled high quality LCOS devices. We have reached our aim of less than one quarter wavelength phase distortion across the active area. © 2011 IEEE.