Fabrication of diamond based schottky barrier diodes with oxide ramp termination

The paper's goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer nonuniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included. © 2007 IEEE.

Microgripper using a diamond like carbon/metal bilayer

A novel normally closed microcage has been fabricated and characterized. This device was made from a highly compressively stressed diamond like carbon (DLC) and electroplated Ni bimorph structure. The large stress in the DLC causes the bimorph layer to curve once it is released from the substrate. The radius of curvature is in the range of 18 - 50μm, and can be controlled by varying the DLC and the Ni thicknesses. The devices can be operated in a pulsed mode current with low operation temperature, and can be opened by ∼60μm laterally with a power consumption of only ∼16mW. © 2004 IEEE.

Normally closed microgrippers based on diamond-like carbon/Ni bimorph and diamond-like carbon/metal/polymer trimorph structures

Multi-finger, normally-closed microgrippers made from a bilayer of a metal and diamond-like carbon (DLC) or a trilayer of a polymer, metal and DLC have been analysed, simulated and fabricated. Temperatures of ∼700 K are necessary to open Ni/DLC bimorph structures. Microgrippers made from an SU8/DLC bilayer or SU8/Al/DLC trilayer have also been fabricated, and fully closed microcages with diameters of ∑40 μm have been obtained. Using SU8 reduces the opening temperature of these devices to only ∼400 K.