TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

COMPARISON OF MILLISECOND ANNEALING OF B IMPLANTS AND ISOTHERMAL ANNEALING FOR TIMES OF A FEW SECONDS.

The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density.

REGROWTH RATES OF AMORPHOUS LAYERS IN SILICON-ON-SAPPHIRE FILMS.

The rate and direction of regrowth of amorphous layers, created by self-implantation, in silicon-on-sapphire (SOS) have been studied using time resolved reflectivity (TRR) experiments performed simultaneously at two wavelengths. Regrowth of an amorphous layer towards the surface was observed in specimens implanted with 3 multiplied by (times) 10**1**5Si** plus /cm**2 at 50keV and regrowth of a buried amorphous layer, from a surface seed towards the sapphire, was observed in specimens implanted with 1 multiplied by (times) 10**1**5Si** plus /cm**2 at 175keV. Rapid isothermal heating to regrow the layers was performed in an electron beam annealing system. The combination of 514. 5nm and 632. 8nm wavelengths was found to be particularly useful for TRR studies since the high absorption in amorphous silicon, at the shorter wavelength, means that the TRR trace is not complicated by reflection from the silicon-sapphire interface until regrowth is nearly complete.

HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Functional programming based CACSD environment

An engineering design environment should allow users to design complex engineering systems, to manage and coordinate the designs as they proceed, and to develop and modify the software tools used for designs. These requirements call for a programming environment with an integrated set of software tools of different functionalities. The required functionalities are mainly: the provision of design algorithms based on suitable numeric software, appropriate data structures for the application area, a user-friendly interface, and the provision of a design database for the long term management of the designs generated. The provision of such an integrated design environment in a functional programming environment with particular emphasis on the provision of appropriate control-theoretic data structures and data model is described. Object-orientation is used to model entities in the application domain, which are represented by persistent objects in the database. Structural properties, relationships and operations on entities are modelled through objects and functions classified into strict types with inheritance semantics and a recursive structure.

Tutorial on loop shaping using H-infinity robust stabilization

A new method for multivariable control was proposed in McFarlane and Glover (1988 CDC). This method involved shaping the open-loop singular values with pre and/or post compensators and then designing a controller to robustly stabilize a normalized coprime factorization of this weighted plant. The method has many attractive features including guaranteed loop shape and robust stability and performance. This talk will outline the rationale of this method and illustrate its use on a number of applications.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.