Growth and shape control of disks by bending and extension

Differential growth of thin elastic bodies furnishes a surprisingly simple explanation of the complex and intriguing shapes of many biological systems, such as plant leaves and organs. Similarly, inelastic strains induced by thermal effects or active materials in layered plates are extensively used to control the curvature of thin engineering structures. Such behaviour inspires us to distinguish and to compare two possible modes of differential growth not normally compared to each other, in order to reveal the full range of out-of-plane shapes of an initially flat disk. The first growth mode, frequently employed by engineers, is characterised by direct bending strains through the thickness, and the second mode, mainly apparent in biological systems, is driven by extensional strains of the middle surface. When each mode is considered separately, it is shown that buckling is common to both modes, leading to bistable shapes: growth from bending strains results in a double-curvature limit at buckling, followed by almost developable deformation in which the Gaussian curvature at buckling is conserved; during extensional growth, out-of-plane distortions occur only when the buckling condition is reached, and the Gaussian curvature continues to increase. When both growth modes are present, it is shown that, generally, larger displacements are obtained under in-plane growth when the disk is relatively thick and growth strains are small, and vice versa. It is also shown that shapes can be mono-, bi-, tri- or neutrally stable, depending on the growth strain levels and the material properties: furthermore, it is shown that certain combinations of growth modes result in a free, or natural, response in which the doubly curved shape of disk exactly matches the imposed strains. Such diverse behaviour, in general, may help to realise more effective actuation schemes for engineering structures. © 2012 Elsevier Ltd. All rights reserved.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

Mode I crack growth resistance of metallic foams

A Dugdale-type cohesive zone model is used to predict the mode I crack growth resistance (R-curve) of metallic foams, with the fracture process characterized by an idealized traction-separation law that relates the crack surface traction to crack opening displacement. A quadratic yield function, involving the von Mises effective stress and mean stress, is used to account for the plastic compressibility of metallic foams. Finite element calculations are performed for the crack growth resistance under small scale yielding and small scale bridging in plane strain, with K-field boundary conditions. The following effects upon the fracture process are quantified: material hardening, bridging strength, T-stress (the non-singular stress acting parallel to the crack plane), and the shape of yield surface. To study the failure behaviour and notch sensitivity of metallic foams in the presence of large scale yielding, a study is made for panels embedded with either a centre-crack or an open hole and subjected to tensile stressing. For the centre-cracked panel, a transition crack size is predicted for which the fracture response switches from net section yielding to elastic-brittle fracture. Likewise, for a panel containing a centre-hole, a transition hole diameter exists for which the fracture response switches from net section yielding to a local maximum stress criterion at the edge of the hole.

FATIGUE CRACK GROWTH - THE COMPLICATIONS.

A vast body of experimental data has been accumulated on the constant amplitude crack growth response of structural metals in moist laboratory air. Usually the data is presented as plots of crack growth rate, da/dN, against stress intensity range, DELTA K. In order to extrapolate this data to fatigue crack growth in more active or more inert environments, to crack growth under variable amplitude loading, or to crack growth under multi-axial or mixed mode loading, the mechanisms of crack advance and crack closure should be considered. This paper briefly reviews the crack closure phenomenon and discusses the dominant causes of accelerated and retarded growth under changes in environment or type of loading. It is argued that simple constant amplitude data is often surprisingly accurate when used to predict crack growth in more complex situations. However, there are some cases where constant amplitude data lead to dangerously non-conservative predictions of fatigue life.

A discrete dislocation analysis of fatigue crack growth

Cyclic loading of a plane strain mode I crack under small scale yielding is analyzed using discrete dislocation dynamics. The dislocations are all of edge character, and are modeled as line singularities in an elastic solid. At each stage of loading, superposition is used to represent the solution in terms of solutions for edge dislocations in a half-space and a non-singular complementary solution that enforces the boundary conditions, which is obtained from a linear elastic, finite element solution. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated into the formulation through a set of constitutive rules. An irreversible relation between the opening traction and the displacement jump across a cohesive surface ahead of the initial crack tip is also specified, which permits crack growth to emerge naturally. It is found that crack growth can occur under cyclic loading conditions even when the peak stress intensity factor is smaller than the stress intensity required for crack growth under monotonic loading conditions; however below a certain threshold value of ΔKI no crack growth was seen.

Transient growth and triggering in the horizontal Rijke tube Matthew

This theoretical paper examines a non-normal and non-linear model of a horizontal Rijke tube. Linear and non-linear optimal initial states, which maximize acoustic energy growth over a given time from a given energy, are calculated. It is found that non-linearity and non-normality both contribute to transient growth and that, for this model, linear optimal states are only a good predictor of non-linear optimal states for low initial energies. Two types of non-linear optimal initial state are found. The first has strong energy growth during the first period of the fundamental mode but loses energy thereafter. The second has weaker energy growth during the first period but retains high energy for longer. The second type causes triggering to self-sustained oscillations from lower energy than the first and has higher energy in the fundamental mode. This suggests, for instance, that low frequency noise will be more effective at causing triggering than high frequency noise.

Modeling mode i fracture of bitumen films

The fracture behavior of thin films of bitumen in double cantilever beam (DCB) specimens was investigated over a wide range of temperature and loading rate conditions using finite-element analysis. The model includes a phenomenological model for the mechanical behavior of bitumen, implemented into a special-purpose finite-element user material subroutine, combined with a cohesive zone model (CZM) for simulating the fracture process. The finite-element model is validated against experimental results from laboratory tests of DCB specimens by comparing measured and predicted load-line deflection histories and fracture energy release rates. Computer simulation results agreed well with experimental data of DCB joints containing bitumen films in terms of peak stress, fracture toughness, and stress-strain history response. The predicted "normalized toughness," G=2h, was found to increase in a power-law manner with effective temperaturecompensated strain rate in the ductile region as previously observed experimentally. In the brittle regime, G=2h is virtually constant. The model successfully captured the ductile and brittle failure behavior of bitumen films in opening mode (tension) for stable crack growth conditions. © 2013 American Society of Civil Engineers.