Global state synchronization in networks of cyclic feedback systems

This technical note studies global asymptotic state synchronization in networks of identical systems. Conditions on the coupling strength required for the synchronization of nodes having a cyclic feedback structure are deduced using incremental dissipativity theory. The method takes advantage of the incremental passivity properties of the constituent subsystems of the network nodes to reformulate the synchronization problem as one of achieving incremental passivity by coupling. The method can be used in the framework of contraction theory to constructively build a contracting metric for the incremental system. The result is illustrated for a network of biochemical oscillators. © 2011 IEEE.

System-of-system Approaches and Challenges for Multi-Site Manufacturing

In the multi-site manufacturing domain, systems-of-systems (SoS) are rarely called so. However, there exist a number of collaborative manufacturing paradigms which closely relate to system-of-system principles. These include distributed manufacturing, dispersed network manufacturing, virtual enterprises and cloud manufacturing/manufacturing-as-a-service. This paper provides an overview of these terms and paradigms, exploring their characteristics, overlaps and differences. These manufacturing paradigms are then considered in relation to five key system-of-systems characteristics: autonomy, belonging, connectivity, diversity and emergence. Data collected from two surveys of academic and industry experts is presented and discussed, with key challenges and barriers to multi-site manufacturing SoS identified.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.