Inkjet printing of weakly elastic polymer solutions

Fluid assessment methods, requiring small volumes and avoiding the need for jetting, are particularly useful in the design of functional fluids for inkjet printing applications. With the increasing use of complex (rather than Newtonian) fluids for manufacturing, single frequency fluid characterisation cannot reliably predict good jetting behaviour, owing to the range of shearing and extensional flow rates involved. However, the scope of inkjet fluid assessments (beyond achievement of a nominal viscosity within the print head design specification) is usually focused on the final application rather than the jetting processes. The experimental demonstration of the clear insufficiency of such approaches shows that fluid jetting can readily discriminate between fluids assessed as having similar LVE characterisation (within a factor of 2) for typical commercial rheometer measurements at shearing rates reaching 104rads-1.Jetting behaviour of weakly elastic dilute linear polystyrene solutions, for molecular weights of 110-488. kDa, recorded using high speed video was compared with recent results from numerical modelling and capillary thinning studies of the same solutions.The jetting images show behaviour ranging from near-Newtonian to "beads-on-a-string". The inkjet printing behaviour does not correlate simply with the measured extensional relaxation times or Zimm times, but may be consistent with non-linear extensibility L and the production of fully extended polymer molecules in the thinning jet ligament.Fluid test methods allowing a more complete characterisation of NLVE parameters are needed to assess inkjet printing feasibility prior to directly jetting complex fluids. At the present time, directly jetting such fluids may prove to be the only alternative. © 2014 The Authors.

High Frequency Acousto-electric Single Photon Source

We propose a single optical photon source for quantum cryptography based on the acousto-electric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons which reside in the SAW minima and travel at the velocity of sound. In our scheme these electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single (or N) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated.

High-frequency acousto-electric single-photon source

We propose a single optical photon source for quantum cryptography based on the acoustoelectric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons that reside in the SAW minima and travel at the velocity of sound. In our scheme, the electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single- (or N-) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated. ©2000 The American Physical Society.

270GHz, 580fs Optical Pulse Generation from a single-section quantum-dash fabry-pérot laser using frequency multiplication

Pulse generation from a mode-locked single-section 1.55μm quantum-dash FP laser is demonstrated under continuous-wave operation. A 270GHz, 580fs pulse train is achieved by applying frequency multiplication using fiber dispersion. ©2009 Optical Society of America.

A bulk acoustic mode single-crystal silicon microresonator with a high-quality factor

This paper details a bulk acoustic mode resonator fabricated in single-crystal silicon with a quality factor of 15 000 in air, and over a million below 10 mTorr at a resonant frequency of 2.18 MHz. The resonator is a square plate that is excited in the square-extensional mode and has been fabricated in a commercial foundry silicon-on-insulator (SOI) MEMS process through MEMSCAP. This paper also presents a simple method of extracting resonator parameters from raw measurements heavily buried in electrical feedthrough. Its accuracy has been demonstrated through a comparison between extracted motional resistance values measured at different voltage biases and those predicted from an analytical model. Finally, a method of substantially cancelling electrical feedthrough through system-level electronic implementation is also introduced. © 2008 IOP Publishing Ltd.

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

A single-crystal silicon resonant bulk acoustic mass sensor with a measured resolution of 125 pg cm2 is presented. The mass sensor comprises a micromachined silicon plate that is excited in the square-extensional bulk acoustic resonant mode at a frequency of 2.182 MHz, with a quality factor exceeding 106. The mass sensor has a measured mass to frequency shift sensitivity of 132 Hz cm2 μg. The resonator element is embedded in a feedback loop of an electronic amplifier to implement an oscillator with a short term frequency stability of better than 7 ppb at an operating pressure of 3.8 mTorr. © 2007 American Institute of Physics.

5.4-MHz single-crystal silicon wine glass mode disk resonator with quality factor of 2 million

This paper reports the design and electrical characterization of a micromechanical disk resonator fabricated in single crystal silicon using a foundry SOI micromachining process. The microresonator has been selectively excited in the radial extensional and the wine glass modes by reversing the polarity of the DC bias voltage applied on selected drive electrodes around the resonant structure. The quality factor of the resonator vibrating in the radial contour mode was 8000 at a resonant frequency of 6.34 MHz at pressure below 10 mTorr vacuum. The highest measured quality factor of the resonator in the wine glass resonant mode was 1.9 × 106 using a DC bias voltage of 20 V at about the same pressure in vacuum; the resonant frequency was 5.43 MHz and the lowest motional resistance measured was approximately 17 kΩ using a DC bias voltage of 60 V applied across 2.7 μm actuation gaps. This corresponds to a resonant frequency-quality factor (f-Q) product of 1.02 × 1013, among the highest reported for single crystal silicon microresonators, and on par with the best quartz crystal resonators. The quality factor for the wine glass mode in air was approximately 10,000. © 2009 Elsevier B.V. All rights reserved.

The direct field boundary impedance of two-dimensional periodic structures with application to high frequency vibration prediction.

Large sections of many types of engineering construction can be considered to constitute a two-dimensional periodic structure, with examples ranging from an orthogonally stiffened shell to a honeycomb sandwich panel. In this paper, a method is presented for computing the boundary (or edge) impedance of a semi-infinite two-dimensional periodic structure, a quantity which is referred to as the direct field boundary impedance matrix. This terminology arises from the fact that none of the waves generated at the boundary (the direct field) are reflected back to the boundary in a semi-infinite system. The direct field impedance matrix can be used to calculate elastic wave transmission coefficients, and also to calculate the coupling loss factors (CLFs), which are required by the statistical energy analysis (SEA) approach to predicting high frequency vibration levels in built-up systems. The calculation of the relevant CLFs enables a two-dimensional periodic region of a structure to be modeled very efficiently as a single subsystem within SEA, and also within related methods, such as a recently developed hybrid approach, which couples the finite element method with SEA. The analysis is illustrated by various numerical examples involving stiffened plate structures.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.