Bulk forming of sheet metal

Ever increasing demands on functional integration of high strength light weight products leads to the development of a new class of manufacturing processes. The application of bulk forming processes to sheet or plate semi-finished products, sometimes in combination with conventional sheet forming processes creates new products with the requested properties. The paper defines this new class of sheet-bulk metal forming processes, gives an overview of the existing processes belonging to this class, highlights the tooling aspects as well as the resulting product properties and presents a short summary of the relevant work that has been done towards modeling and simulation. © 2012 CIRP.

A Videogrammetric As-Built Data Collection Method for Digital Fabrication of Sheet Metal Roof Panels

A roofing contractor typically needs to acquire as-built dimensions of a roof structure several times over the course of its build to be able to digitally fabricate sheet metal roof panels. Obtaining these measurements using the exiting roof surveying methods could be costly in terms of equipment, labor, and/or worker exposure to safety hazards. This paper presents a video-based surveying technology as an alternative method which is simple to use, automated, less expensive, and safe. When using this method, the contractor collects video streams with a calibrated stereo camera set. Unique visual characteristics of scenes from a roof structure are then used in the processing step to automatically extract as-built dimensions of roof planes. These dimensions are finally represented in a XML format to be loaded into sheet metal folding and cutting machines. The proposed method has been tested for a roofing project and the preliminary results indicate its capabilities.

A novel process for transforming sheet metal blanks: Ridged die forming

Up to 20% of all sheet metal produced is scrapped as blanking skeletons. A novel process is therefore designed and examined, aiming to transform tessellating 'pre-blanks' in-plane into the real blanks required for stamping. Prior to blanking, the sheet is formed with a set of ridged dies, from which pre-blanks are cut and then flattened into true blanks. Several different approaches to designing ridged dies are evaluated by simulation and experiment, and the best results demonstrate a potential reduction in blanking yield losses for can-making from 9.3% to 6.9%. © 2013 CIRP.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28-0.4 and not close to 1 because S is controlled by Ti-O-type bonds not Sr-O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si. © 1999 American Institute of Physics.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate

Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 - 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.