243 resultados para Semiconductor junctions
em Cambridge University Engineering Department Publications Database
Resumo:
A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. © 2010 Optical Society of America.
Resumo:
The fabrication of nanopillar devices has been essential to the understanding and development of metallic spin electronics. This paper discusses the processes that can be used for the fabrication of such structures and the challenges in which they present, with particular emphasis on extreme sub-micrometre pillar structures suitable for the study of spin-transfer torque effects.
