Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy

Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

Inhomogeneous soils and their effect on ground vibration due to underground railways

Ground vibration due to underground railways is a significant source of disturbance for people living or working near subways. Numerical models are commonly used to predict vibration levels; however, uncertainty inherent to these simulations must be understood to give confidence in the predictions. A semi-analytical approach is developed herein to investigate the effect of uncertainty in soil material properties on the surface vibration of layered halfspaces excited by an underground railway. The half-space is simulated using the thin-layer method coupled with the pipe-in-pipe (PiP) method for determining the load on the buried tunnel. The K-L expansion method is employed to smoothly vary the material properties throughout the soil by up to 10%. The simulation predicts a surface rms velocity variation of 5-10dB compared to a homogeneous, layered halfspace. These results suggest it may be prudent to include a 5dB error band on predicted vibration levels when simulating areas of varied material properties.

Coatings and surface treatments for protection against low-velocity erosion-corrosion in fluidized beds

Surface coatings and treatments have been used to reduce material loss of components in bubbling fluidized bed combustors (FBCs). The performance of protective coatings in FBC boilers and laboratory simulations is reviewed. Important coating properties to minimize wastage appear to be high hardness, low oxidation rate, low porosity, high adhesion and sufficient thickness to maintain protection for a long period. Economic considerations and criteria for choosing a suitable coating or treatment are discussed for the different types of bubbling FBC. © 1995.

Wave propagation velocity under a vertically vibrated surface foundation

The ultimate objective of the research conducted by the authors is to explore the feasibility of determining reliable in situ values of soil modulus as a function of strain. In field experiments, an excitation is applied on the ground surface using large-scale shakers, and the response of the soil deposit is recorded through receivers embedded in the soil. The focus of this paper is on the simulation and observation of signals that would be recorded at the receiver locations under idealized conditions to provide guidelines on the interpretation of the field measurements. Discrete models are used to reproduce one-dimensional and three-dimensional geometries. When the first times of arrival are detected by receivers under the vertical impulse, they coincide with the arrival of the P wave; therefore related to the constrained modulus of the material. If one considers, on the other hand, phase differences between the motions at two receivers, the picture is far more complicated and one would obtain propagation velocities, function of frequency and measuring location, which do not correspond to either the constrained modulus or Young's modulus. It is necessary then to conduct more rigorous and complicated analyses in order to interpret the data. This paper discusses and illustrates these points. Copyright © 2008 John Wiley & Sons, Ltd.