Efficient field emission from triode-type 1D arrays of carbon nanotubes.

Carbon nanotube (CNT) emitters were formed on line-patterned cathodes in microtrenches through a thermal CVD process. Single-walled carbon nanotubes (SWCNTs) self-organized along the trench lines with a submicron inter-CNT spacing. Excellent field emission (FE) properties were obtained: current densities at the anode (J(a)) of 1 microA cm(-2), 10 mA cm(-2) and 100 mA cm(-2) were recorded at gate voltages (V(g)) of 16, 25 and 36 V, respectively. The required voltage difference to gain a 1:10 000 contrast of the anode current was as low as 9 V, indicating that a very low operating voltage is possible for these devices. Not only a large number of emission sites but also the optimal combination of trench structure and emitter morphology are crucial to achieve the full FE potential of thin CNTs with a practical lifetime. The FE properties of 1D arrays of CNT emitters and their optimal design are discussed. Self-organization of thin CNTs is an attractive prospect to tailor preferable emitter designs in FE devices.

The influence of 1D, meso- and crystal structures on charge transport and recombination in solid-state dye-sensitized solar cells

We have prepared single crystalline SnO2 and ZnO nanowires and polycrystalline TiO2 nanotubes (1D networks) as well as nanoparticle-based films (3D networks) from the same materials to be used as photoanodes for solid-state dye-sensitized solar cells. In general, superior photovoltaic performance can be achieved from devices based on 3-dimensional networks, mostly due to their higher short circuit currents. To further characterize the fabricated devices, the electronic properties of the different networks were measured via the transient photocurrent and photovoltage decay techniques. Nanowire-based devices exhibit extremely high, light independent electron transport rates while recombination dynamics remain unchanged. This indicates, contrary to expectations, a decoupling of transport and recombination dynamics. For typical nanoparticle-based photoanodes, the devices are usually considered electron-limited due to the poor electron transport through nanocrystalline titania networks. In the case of the nanowire-based devices, the system becomes limited by the organic hole transporter used. In the case of polycrystalline TiO2 nanotube-based devices, we observe lower transport rates and higher recombination dynamics than their nanoparticle-based counterparts, suggesting that in order to improve the electron transport properties of solid-state dye-sensitized solar cells, single crystalline structures should be used. These findings should aid future design of photoanodes based on nanowires or porous semiconductors with extended crystallinity to be used in dye-sensitized solar cells. © 2013 The Royal Society of Chemistry.

Ballistic Single-Electron Quputer

We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

High tilt angle FLC SLM for optical interconnects

The use of high tilt angle FLC SLM for optical interconnects was discussed. The transmissive SLM was designed as a 320×1 pixels glass SLM with 20 μm pitch pixels and 2 μm pixel deadspace. The SLM was fabricated using standard class 100 cleanroom facilities to make a glass on glass 1D SLM. The results show that a N×N optical switch can be built using the two-hologram architecture.

Numerical simulation of the growth of ZnO nanostructures in a tube furnace by physical vapour deposition

Zinc oxide is a versatile II-VI naturally n-type semiconductor that exhibits piezoelectric properties. By controlling the growth kinetics during a simple carbothermal reduction process a wide range of 1D nanostructures such as nanowires, nanobelts, and nanotetrapods have been synthesized. The driving force: for the nanostructure growth is the Zn vapour supersaturation and supply rate which, if known, can be used to predict and explain the type of crystal structure that results. A model which attempts to determine the Zn vapour concentration as a function of position in the growth furnace is described. A numerical simulation package, COMSOL, was used to simultaneously model the effects of fluid flow, diffusion and heat transfer in a tube furnace made specifically for ZnO nanostructure growth. Parameters such as the temperature, pressure, and flow rate are used as inputs to the model to show the effect that each one has on the Zn concentration profile. An experimental parametric study of ZnO nanostructure growth was also conducted and compared to the model predictions for the Zn concentration in the tube. © 2008 Materials Research Society.

Retaining axial-lateral orthogonality in steered ultrasound data to improve image quality in reconstructed lateral displacement data

Ultrasound elastography tracks tissue displacements under small levels of compression to obtain images of strain, a mechanical property useful in the detection and characterization of pathology. Due to the nature of ultrasound beamforming, only tissue displacements in the direction of beam propagation, referred to as 'axial', are measured to high quality, although an ability to measure other components of tissue displacement is desired to more fully characterize the mechanical behavior of tissue. Previous studies have used multiple one-dimensional (1D) angled axial displacements tracked from steered ultrasound beams to reconstruct improved quality trans-axial displacements within the scan plane ('lateral'). We show that two-dimensional (2D) displacement tracking is not possible with unmodified electronically-steered ultrasound data, and present a method of reshaping frames of steered ultrasound data to retain axial-lateral orthogonality, which permits 2D displacement tracking. Simulated and experimental ultrasound data are used to compare changes in image quality of lateral displacements reconstructed using 1D and 2D tracked steered axial and steered lateral data. Reconstructed lateral displacement image quality generally improves with the use of 2D displacement tracking at each steering angle, relative to axial tracking alone, particularly at high levels of compression. Due to the influence of tracking noise, unsteered lateral displacements exhibit greater accuracy than axial-based reconstructions at high levels of applied strain. © 2011 SPIE.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Modelling 2DEG charges in AlGaN/GaN heterostructures

In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified. © 2012 IEEE.

DC and AC Shielding properties of bulk high-tc

We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

Simulations of thermal upgrading methods for oil shale reservoirs

This paper analyzes reaction and thermal front development in porous reservoirs with reacting flows, such as those encountered in shale oil extraction. A set of dimensionless parameters and a 3D code are developed in order to investigate the important physical and chemical variables of such reservoirs when heated by in situ methods. This contribution builds on a 1D model developed for the precursor study to this work. Theory necessary for this study is presented, namely shale decomposition chemical mechanisms, governing equations for multiphase flow in porous media and necessary closure models. Plotting the ratio of the thermal wave speed to the fluid speed allows one to infer that the reaction wave front ends where this ratio is at a minimum. The reaction front follows the thermal front closely, thus allowing assumptions to be made about the extent of decomposition solely by looking at thermal wave progression. Furthermore, this sensitivity analysis showed that a certain minimum permeability is required in order to ensure the formation of a traveling thermal wave. It was found that by studying the non-dimensional governing parameters of the system one can ascribe characteristic values for these parameters for given initial and boundary conditions. This allows one to roughly predict the performance of a particular method on a particular reservoir given approximate values for initial and boundary conditions. Channelling and flow blockage due to carbon residue buildup impeded each method's performance. Blockage was found to be a result of imbalanced heating. Copyright 2012, Society of Petroleum Engineers.

Ultrafast dynamics of exciton formation in semiconductor nanowires.

The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires is investigated using femtosecond transient photoluminescence spectroscopy at 10 K. Following nonresonant excitation, a bimolecular interconversion of the initially generated electron-hole plasma into an exciton population is observed. This conducting-to-insulating transition appears to occur gradually over electron-hole charge pair densities of 2-4 × 10(16) cm(-3) . The smoothness of the Mott transition is attributed to the slow carrier-cooling during the bimolecular interconversion of free charge carriers into excitons and to the presence of chemical-potential fluctuations leading to inhomogeneous spectral characteristics. These results demonstrate that high-quality nanowires are model systems for investigating fundamental scientific effects in 1D heterostructures.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © 2012 OSA.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © OSA 2012.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission and nearfield characterization of a novel parabolic tapered 1D photonic crystal cavity in silicon. The design allows repeatable device fabrication, high quality factor and small modal volume. © 2012 OSA.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission spectrum measurement, and near-field characterization of a parabolic tapered one-dimensional photonic crystal cavity in silicon. The results shows a relatively high quality factor (∼43 000), together with a small modal volume of ∼ 1. 1 (λ/n) 3. Moreover, the design allows repeatable device fabrication, as evident by the similar characteristics obtained for several tens of devices that were fabricated and tested. These demonstrated 1D PhC cavities may be used as a building block in integrated photonic circuits for optical on-chip interconnects and sensing applications. © 2012 American Institute of Physics.