232 resultados para SM

em Cambridge University Engineering Department Publications Database


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The extreme sensitivity of Sm/Ba at high temperature in air becomes an obstacle to the fabrication of SmBCO single grains that exhibit stable and reliable superconducting properties. In this research, the superconducting properties of SmBCO single grains fabricated by top seeded melt growth (TSMG) from different batches of commercial SmBa2Cu3O 7-d (Sm-123) precursor powder using different processing atmospheres (air and 0.1% O2 in Ar), different processing methods (isothermal growth and continuous cooling) and different amounts of BaO2 content to suppress Sm/Ba substitution in air have been investigated in an attempt to understand fully the TSMG process for this system. As a result, based on extensive data, a novel and simple, low temperature post-annealing approach is proposed specifically to overcome the sensitivity of Tc to Sm/Ba substitution in order to simplify the fabrication of SmBCO and to increase its reliability with a view to the practical processing of these materials. Initial processing trials have been performed successfully to demonstrate the viability of the novel post-annealing process. © 2013 IOP Publishing Ltd.

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One of the key technologies to evolve in the displays market in recent years is liquid crystal over silicon (LCOS) microdisplays. Traditional LCOS devices and applications such as rear projection televisions, have been based on intensity modulation electro-optical effects, however, recent developments have shown that multi-level phase modulation from these devices is extremely sought after for applications such as holographic projectors, optical correlators and adaptive optics. Here, we propose alternative device geometry based on the flexoelectric-optic effect in a chiral nematic liquid crystal. This device is capable of delivering a multilevel phase shift at response times less than 100 microsec which has been verified by phase shift interferometry using an LCOS test device. The flexoelectric on silicon device, due to its remarkable characteristics, enables the next generation of holographic devices to be realized.

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We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidized Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO(2) polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress, and interactions with single water molecules of a natively oxidized Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidized and amorphous silica surfaces of 97 and 90 mJm(2), respectively, at a water adsorption coverage of approximately 1 ML. The difference arises from the stronger interaction of the natively oxidized surface with liquid water, resulting in a higher heat of immersion (203 vs 166 mJm(2)), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller densities with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.

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