Effects of multi-scattering on the performance of a single-beam acoustic manipulation device.

The effects of multiple scattering on acoustic manipulation of spherical particles using helicoidal Bessel-beams are discussed. A closed-form analytical solution is developed to calculate the acoustic radiation force resulting from a Bessel-beam on an acoustically reflective sphere, in the presence of an adjacent spherical particle, immersed in an unbounded fluid medium. The solution is based on the standard Fourier decomposition method and the effect of multi-scattering is taken into account using the addition theorem for spherical coordinates. Of particular interest here is the investigation of the effects of multiple scattering on the emergence of negative axial forces. To investigate the effects, the radiation force applied on the target particle resulting from a helicoidal Bessel-beam of different azimuthal indexes (m = 1 to 4), at different conical angles, is computed. Results are presented for soft and rigid spheres of various sizes, separated by a finite distance. Results have shown that the emergence of negative force regions is very sensitive to the level of cross-scattering between the particles. It has also been shown that in multiple scattering media, the negative axial force may occur at much smaller conical angles than previously reported for single particles, and that acoustic manipulation of soft spheres in such media may also become possible.

Demonstration of multi-casting in a 1 × 9 LCOS wavelength selective switch

A multi-functional 1 × 9 wavelength selective switch based on liquid crystal on silicon (LCOS) spatial light modulator technology and anamorphic optics was tested at a channel spacing of 100 and 200 GHz, including dynamic data measurements on both single beam deflection and multi-casting to two ports. The multi-casting holograms were optimized using a modified Gerchberg-Saxton routine to design the core hologram, followed by a simulated annealing routine to reduce crosstalk at non-switched ports. The effect of clamping the magnitude of phase changes between neighboring pixels during optimization was investigated, with experimental results for multi-casting to two ports resulting in a signal insertion loss of-7.6 dB normalized to single port deflection, a uniformity of ±0.6%, and a worst case crosstalk of-19.4 dB, which can all be improved further by using a better anti-reflection coating on the LCOS SLM coverplate and other measures. © 2013 IEEE.

Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition

It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

Ballistic Single-Electron Quputer

We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

Occurrence of particle debris field during focused Ga ion beam milling of glassy carbon

To explore the machining characteristics of glassy carbon by focused ion beam (FIB), particles induced by FIB milling on glassy carbon have been studied in the current work. Nano-sized particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to FIB milling. Two ion beam scanning modes - slow single scan and fast repetitive scan - have been tested. Fewer particles are found in single patterns milled in fast repetitive scan mode. For a group of test patterns milled in a sequence, it was found that a greater number of particles were deposited around sites machined early in the sequence. In situ EDX analysis of the particles showed that they were composed of C and Ga. The formation of particles is related to the debris generated at the surrounding areas, the low melting point of gallium used as FIB ion source and the high contact angle of gallium on glassy carbon induces de-wetting of Ga and the subsequent formation of Ga particles. Ultrasonic cleaning can remove over 98% of visible particles. The surface roughness (Ra) of FIB milled areas after cleaning is less than 2 nm. © 2010.

An efficient model for the dynamic behaviour of a single pile in viscoelastic soil

This paper presents a novel, three-dimensional, single-pile model, formulated in the wavenumber domain and adapted to account for boundary conditions using the superposition of loading cases. The pile is modelled as a column in axial vibration, and a Euler-Bernoulli beam in lateral vibration. The surrounding soil is treated as a viscoelastic continuum. The response of the pile is presented in terms of the stiffness and damping coefficients, and also the magnitude and phase of the pile-head frequency-response function. Comparison with existing models shows that excellent agreement is observed between this model, a boundary-element formulation, and an elastic-continuum-type formulation. This three-dimensional model has an accuracy equivalent to a 3D boundary-element model, and a runtime similar to a 2D plane-strain analytical model. Analysis of the response of the single pile illustrates a difference in axial and lateral vibration behaviour; the displacement along the pile is relatively invariant under axial loads, but in lateral vibration the pile exhibits localised deformations. This implies that a plane-strain assumption is valid for axial loadings and only at higher frequencies for lateral loadings. © 2013 Elsevier Ltd.

Electron-beam-induced direct etching of graphene

We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. © 2013 American Chemical Society.