Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Experimental studies of an accelerating, pitching, flat plate at low Reynolds number

The understanding of low Reynolds number aerodynamics is becoming increasingly prevalent with the recent surge in interest in advanced Micro-Air Vehicle (MAV) technology. Research in this area has been primarily stimulated by a military need for smaller, more versatile, autonomous, surveillance aircraft. The mechanism for providing the high lift coefficient required forMAV applications is thought to be largely influenced by the formation of a Leading Edge Vortex (LEV). This paper analyses experimentally, the influence of the LEV effect for a flat plate wing (AR = 4) under fast and slow pitch-up motions at Re =10,000 using a combination of dye flow visualisation and PIV measurements. It is found that a fast pitch over 1c shows a flow topology dominant LEV, while for a slow pitch case over 6c, the flow is largely separated. The development of the suction surface flow and the LEV was strongly correlated with the kinematics of the leading edge, suggesting that the effective local angle of incidence at the Leading Edge (LE) is of considerable significance in unsteady pitching motions. © 2013 by P.R.R.J Stevens.