Ready configuration of machines into an existing manufacturing system

This paper focuses on simplifying and easing the integration of a new machine into an existing conventional hierarchical manufacturing system. Based on a distributed manufacturing paradigm, it proposes the functions and interfaces that a new machine and an existing manufacturing system should possess so that ready and simple configuration of additional machines can be achieved. The configuration process is intended to include, not only mechanical and electrical interfaces, but also decision system interfaces (such as planning, scheduling, and shop-floor control). Preliminary laboratory experiments to compare the reconfigurability resulting from a conventional integration method and the proposed distributed method are presented and discussed. © 2007 ISAM.

Non-catalytic multi-fuel reformer for syngas production for fuel cell applications

Rich combustion of n-heptane, diesel oil, jet A-1 kerosene, and bio-diesel (rapeseed-oil methyl ester) were studied to produce hydrogen enriched gas, ready for the cleanup stages for fuel cell applications. n-heptane was successfully reformed up to an equivalence ratio of 3:1, reaching a conversion efficiency up to 83% for a packed bed of alumina bead burner. Diesel, kerosene and bio-diesel were reformed to synthesis gas with conversion efficiency up to 65%. At equivalence ratio of 2:1 and P=7 kw, stability, low HC formation, high conversion efficiency, and low soot emission were achieved. A common synthesis gas composition around this condition was 15 and 13% H2, 15 and 17% CO, and 4 and 4.5% CO2 for n-heptane and diesel, jet A-1 and bio-diesel, respectively, for burner A. This is an abstract of a paper presented at the 2010 Spring National Meeting (San Antonio, TX 3/21-25/2010).

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

System Dynamics and Scenario Planning: Implementation Challenges

In this paper we discuss key implementation challenges of a systems approach that combines System Dynamics, Scenario Planning and Qualitative Data Analysis methods in tackling a complex problem. We present the methods and the underlying framework. We then detail the main difficulties encountered in designing and planning the Scenario Planning workshop and how they were overcome, such as finding and involving the stakeholders and customising the process to fit within timing constraints. After presenting the results from this application, we argue that the consultants or system analysts need to engage with the stakeholders as process facilitators and not as system experts in order to gain commitment, trust and to improve information sharing. They also need be ready to adapt their tools and processes as well as their own thinking for more effective complex problem solving.

Electrical control of nanoscale functionalization in graphene by the scanning probe technique

Functionalized graphene is a versatile material that has well-known physical and chemical properties depending on functional groups and their coverage. However, selective control of functional groups on the nanoscale is hardly achievable by conventional methods utilizing chemical modifications. We demonstrate electrical control of nanoscale functionalization of graphene with the desired chemical coverage of a selective functional group by atomic force microscopy (AFM) lithography and their full recovery through moderate thermal treatments. Surprisingly, our controlled coverage of functional groups can reach 94.9% for oxygen and 49.0% for hydrogen, respectively, well beyond those achieved by conventional methods. This coverage is almost at the theoretical maximum, which is verified through scanning photoelectron microscope measurements as well as first-principles calculations. We believe that the present method is now ready to realize 'chemical pencil drawing' of atomically defined circuit devices on top of a monolayer of graphene. © 2014 Nature Publishing Group All rights reserved.