49 resultados para Rated voltages

em Cambridge University Engineering Department Publications Database


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This paper details the design and enhanced electrical transduction of a bulk acoustic mode resonator fabricated in a commercial foundry MEMS process utilizing 2.5 μm gaps. The I-V characteristics of electrically addressed silicon resonators are often dominated by capacitive parasitics, inherent to hybrid technologies. This paper benchmarks a variety of drive and detection principles for electrostatically driven square-extensional mode resonators operating in air via analytical models accompanied by measurements of fabricated devices with the primary aim of enhancing the ratio of the motional to feedthrough current at nominal operating voltages. In view of ultimately enhancing the motional to feedthrough current ratio, a new detection technique that combines second harmonic capacitive actuation and piezoresistive detection is presented herein. This new method is shown to outperform previously reported methods utilizing voltages as low as ±3 V in air, providing a promising solution for low voltage CMOS-MEMS integration. To elucidate the basis of this improvement in signal output from measured devices, an approximate analytical model for piezoresistive sensing specific to the resonator topology reported here is also developed and presented. © 2010 Elsevier B.V. All rights reserved.

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Electrically addressed silicon bulk acoustic wave microresonators offer high Q solutions for applications in sensing and signal processing. However, the electrically transduced motional signal is often swamped by parasitic feedthrough in hybrid technologies. With the aim of enhancing the ratio of the motional to feedthrough current at nominal operating voltages, this paper benchmarks a variety of drive and detection principles for electrostatically driven square-extensional mode resonators operating in air and in a foundry MEMS process utilizing 2μm gaps. A new detection technique, combining second harmonic capacitive actuation and piezoresistive detection, outperforms previously reported methods utilizing voltages as low as ± 3V in air providing a promising solution for low voltage CMOS-MEMS integration. ©2009 IEEE.

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We assume that the resistance matrix can be found in electrical impedance tomography from the assumption of linear dependence between the voltages and the currents and with the help of the resistance matrix and the transfer impedance between the electrodes, a directional algebraic reconstruction technique is proposed. The goal is to reconstruct the resistivity distribution by weighting the matrices that are obtained by calculating the orthogonal distance of the underlying mesh elements from the neighbouring port resistivity lines. These weighting matrices, which only depend on the topology of the underlying mesh, can be calculated offline and result in a computationally efficient online procedure with a reasonable image reconstruction performance. Simulation results are provided to validate this approach.

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A 5V/1 V Switched Capacitor (SC) dc-dc converter designed for a 0.18μm CMOS process is analysed in detail, in this paper. Analytical equations are derived for the voltages and currents through the main components of the SC converter. The model includes switches, capacitors, equivalent series resistances and the load. The switches in the converter are represented by MOSFETs in the UMC 0.18μm CMOS process. The impact of system parameters on output voltage ripple are studied using the analytical expressions.

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Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

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We present electro-optic characteristics of a transparent nanophotonic device fabricated on quartz substrate based on multiwall carbon nanotubes and nematic liquid crystals (LCs). The nanotube electrodes spawn a Gaussian electric field to three dimensionally address the LC molecules. The electro-optic characteristics of the device were investigated to optimize the device performance and it was found that lower driving voltages were suitable for microlens array and phase modulation applications, while higher driving voltages with a holding voltage can be used for display-related applications.

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A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

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Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

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The photoisomerisation of a flexoelectric chiral nematic bimesogen system dyed with an azo dye has been investigated. The host material has a pitch and field dependent tilt angle that are temperature independent. Upon illumination by ultra violet, the azo dye molecules undergo a shape change from their trans to cis isomer. The effect of the shape change of the dye on the mixture is to decrease the I-N* transition temperatures, to increase the response times and to decrease the transmitted optical intensity. For the same reduced temperatures, the tilt angles, pitch and threshold voltages for the transition from focal conic to homeotropic textures are unchanged. The macroscopic parameters observed suggest that the orientational order parameter of the system is reduced by UV illumination. The cis isomers do not appear to separate from the host material or significantly change the flexoelectric coefficient. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

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Human locomotion is known to be influenced by observation of another person's gait. For example, athletes often synchronize their step in long distance races. However, how interaction with a virtual runner affects the gait of a real runner has not been studied. We investigated this by creating an illusion of running behind a virtual model (VM) using a treadmill and large screen virtual environment showing a video of a VM. We looked at step synchronization between the real and virtual runner and at the role of the step frequency (SF) in the real runner's perception of VM speed. We found that subjects match VM SF when asked to match VM speed with their own (Figure 1). This indicates step synchronization may be a strategy of speed matching or speed perception. Subjects chose higher speeds when VMSF was higher (though VM was 12km/h in all videos). This effect was more pronounced when the speed estimate was rated verbally while standing still. (Figure 2). This may due to correlated physical activity affecting the perception of VM speed [Jacobs et al. 2005]; or step synchronization altering the subjects' perception of self speed [Durgin et al. 2007]. Our findings indicate that third person activity in a collaborative virtual locomotive environment can have a pronounced effect on an observer's gait activity and their perceptual judgments of the activity of others: the SF of others (virtual or real) can potentially influence one's perception of self speed and lead to changes in speed and SF. A better understanding of the underlying mechanisms would support the design of more compelling virtual trainers and may be instructive for competitive athletics in the real world. © 2009 ACM.

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YBaCuO-coated conductors offer great potential in terms of performance and cost-saving for superconducting fault current limiter (SFCL). A resistive SFCL based on coated conductors can be made from several tapes connected in parallel or in series. Ideally, the current and voltage are shared uniformly by the tapes when quench occurs. However, due to the non-uniformity of property of the tapes and the relative positions of the tapes, the currents and the voltages of the tapes are different. In this paper, a numerical model is developed to investigate the current and voltage sharing problem for the resistive SFCL. This model is able to simulate the dynamic response of YBCO tapes in normal and quench conditions. Firstly, four tapes with different Jc 's and n values in E-J power law are connected in parallel to carry the fault current. The model demonstrates how the currents are distributed among the four tapes. These four tapes are then connected in series to withstand the line voltage. In this case, the model investigates the voltage sharing between the tapes. Several factors that would affect the process of quenches are discussed including the field dependency of Jc, the magnetic coupling between the tapes and the relative positions of the tapes. © 2010 IEEE.

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This paper demonstrates a catalyst-free synthesis of ZnO nanostructures using platinum microheaters under ambient environmental conditions. Different morphologies of ZnO nanostructures are synthesized from the oxidization of Zn thin film by local heating. The synthesized ZnO structures are characterized by the SEM, EDX and Raman spectra. The characterization of two shapes of Pt microheaters is investigated and the relationship between the applied heating power and ZnO nanostructures synthesis is investigated under ambient conditions. We observe that the density and morphology of ZnO nanostructures can be controlled through applied heating voltages. Furthermore, a connected composite structural (Zn-ZnO-Zn) layer is synthesized using combinative microheaters. © 2011 IEEE.