Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Shroud heat transfer measurements from a rotating cavity with an axial throughflow of air

The paper discusses measurements of heat transfer obtained from the inside surface of the peripheral shroud. The experiments were carried out on a rotating cavity, comprising two 0.985-m-dia disks, separated by an axial gap of 0.065 m and bounded at the circumference by a carbon fiber shroud. Tests were conducted with a heated shroud and either unheated or heated disks. When heated, the disks had the same temperature level and surface temperature distribution. Two different temperature distributions were tested; the surface temperature either increased, or decreased with radius. The effects of disk, shroud, and air temperature levels were also studied. Tests were carried out for the range of axial throughflow rates and speeds: 0.0025 ≤ m ≤ 0.2 kg/s and 12.5 ≤ Ω ≤ 125 rad/s, respectively. Measurements were also made of the temperature of the air inside the cavity. The shroud Nusselt numbers are found to depend on a Grashof number, which is defined using the centripetal acceleration. Providing the correct reference temperature is used, the measured Nusselt numbers also show similarity to those predicted by an established correlation for a horizontal plate in air. The heat transfer from the shroud is only weakly affected by the disk surface temperature distribution and temperature level. The heat transfer from the shroud appears to be affected by the Rossby number. A significant enhancement to the rotationally induced free convection occurs in the regions 2 ≤ Ro ≤ 4 and Ro ≥ 20. The first of these corresponds to a region where vortex breakdown has been observed. In the second region, the Rossby number may be sufficiently large for the central throughflow to affect the shroud heat transfer directly. Heating the shroud does not appear to affect the heat transfer from the disks significantly.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Vertical CNT-Si photodiode array.

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.