23 resultados para Quantum anomalous Hall effect

em Cambridge University Engineering Department Publications Database


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A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.

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Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

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Tubular permanent magnet linear generators are a promising generator technology for use in marine renewables. One aspect of their design relates to the conditions necessary for achieving a smooth thrust response from the generator, free from cogging and periodic variations due to spatial harmonics of the flux cutting the generator coils. This paper presents an experimental and finite element study of the sources of thrust ripple in a prototype linear generator for marine generation. A simple self-commutated control scheme is shown, which uses linear Hall-effect sensors and look-up-table based feed-forward compensation to derive the excitation currents required to drive the machine with constant force. Details of the controller's FPGA based implementation are given, including its strategy for detecting sensor failure. © 2011 IEEE.

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We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.