On the time delay in continuous in-cylinder sampling from IC engines

When gas sample is continuously drawn from the cylinder of an internal combustion engine, the sample that appears at the end of the sampling system corresponds to the in-cylinder content sometime ago because of the finite transit time which is a function of the cylinder pressure history. This variable delay causes a dispersion of the sample signal and makes the interpretation of the signal difficult An unsteady flow analysis of a typical sampling system was carried out for selected engine loads and speeds. For typical engine operation, a window in which the delay is approximately constant may be found. This window gets smaller with increase in engine speed, with decrease in load, and with the increase in exit pressure of the sampling system.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

High peak power femtosecond pulse VECSELs for terahertz time domain spectroscopy

We report on a high peak power femtosecond modelocked VECSEL and its application as a drive laser for an all semiconductor terahertz time domain spectrometer. The VECSEL produced near-transform-limited 335 fs sech2 pulses at a fundamental repetition rate of 1 GHz, a centre wavelength of 999 nm and an average output power of 120 mW. We report on the effect that this high peak power and short pulse duration has on our generated THz signal.

Colliding-pulse modelocked quantum dot lasers

Colliding pulse modelocking is demonstrated for the first time in quantum dot lasers. Using 3.9 mm-long devices with a 245 pm-long central absorber, 7 ps pulses at a repetition rate of 20 GHz is obtained. For Gaussian pulses a time-bandwidth product close to the Fourier transform limit is determined. These results confirm the potential of quantum dot lasers for high repetition rate harmonic modelocking.

Gigabit Pulse Position Bistability in Semiconductor Lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps. © 1987, American Medical Association. All rights reserved.

Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Picosecond pulse source for OTDM/WDM applications based on arrayed waveguide grating

A novel technique for high quality femtosecond pulse generation from a gain-switched laser diode by means of pulse compression and transformation in a compact nonlinear fiber device, based on a dispersion-imbalanced fiber loop mirror (DILM) is demonstrated. This source allows the generation of extremely high quality pulses as short as 270 fs on demand with strong suppression of pulse pedestals. Spectral filtering in arrayed waveguide grating (AWG) converts the device into a compact multiwavelength source of high-quality picosecond pulses for optical time division multiplexing/wavelength division multiplexing applications.

Blind frequency synchronisation for OFDM systems with pulse shaping

In multi-carrier systems, small carrier frequency offsets result in significant degradation of performance and this offset should be compensated before demodulation can be performed. In this paper, we consider a generic multi-carrier system with pulse shaping and estimate the frequency offset by exploiting the cyclostationarity of the received signal. By transforming the time domain signal to the cyclic correlation domain we are able to estimate the frequency offset without the aid of pilot symbols or the cyclic prefix. The Bayesian framework is used to obtain the estimate and we show how we can simplify the estimation process. © 1999 IEEE.

High-quality pulse compressor for WDM/OTDM applications

The paper reports the results of a high-quality pulse source incorporating a gain-switched laser diode followed by a novel compact two-cascade fibre compression scheme. The pulse compression scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fibre loop mirror (DILM). We analyse and demonstrate for the first time significant improvement of the loop performance by means of the chirped pulse switching. As a result, the DILM provides high-quality nonlinear pulse compression as well as rejection of the nonsoliton component. In the experiment, 20ps pulses from a gain switched laser diode are compressed to a duration of 300fs at a repetition rate in range 70MHz-10GHz. The pulses are pedestal free and transform-limited. Spectral filtering of the output signal by means of a bandpass filter results in generation of wavelength-tuneable picosecond pulses with a duration defined by the filter bandwidth. Alternatively, signal filtering by an arrayed waveguide grating (AWG) results in multichannel picosecond pulse generation for WDM and OTDM applications. The pulse source is built of standard components and is of compact and potentially robust design.

Improving the performance of a valveless pulse combustor using unsteady fuel injection

This paper describes an experimental investigation into the effect of unsteady fuel injection on the performance of a valveless pulse combustor. Two fuel systems were used. The first delivered a steady flow of ethylene through choked nozzles, and the second delivered ethylene in discrete pulses using high-frequency fuel injectors. Both fuel systems injected directly into the combustion chamber. The high-frequency fuel injectors were phase locked to the unsteady pressure measured on the inlet pipe. The phase and opening pulse width of the injectors and the time-averaged fuel mass flow rate through the injectors were independently varied. For a given fuel mass flow rate, it is shown that the maximum pressure amplitude occurs when fuel is injected during flow reversal in the inlet pipe, i.e. flow direction is out of the combustor. The optimal fuel injection pulse width is shown to be approximately 2/9th of the cycle. It should, however, be noted that this is the shortest time in which the injectors can reliably be fully opened and closed. It is shown that by using unsteady fuel injection the mass flow rate of fuel needed to achieve a given amplitude of unsteady pressure can be reduced by up to 65% when compared with the steady fuel injection case. At low fuel mass flow rates unsteady fuel injection is shown to raise the efficiency of the combustor by a factor of 7 decreasing to a factor of 2 at high fuel mass flow rates. Copyright © 2008 by the American Institute of Aeronautics and Astronautics, Inc.

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.