1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

Corporate document mining for technology intelligence: An analysis of needs, utilization and possibilities

This paper focuses on document data, one of the most significant sources for technology intelligence. To help organisations use their knowledge in documents effectively, this research aims to identify what organizations really want from documents and what might be possible to obtain from them. The research involves a literature review, a series of in-depth/on-site interviews and a descriptive analysis of document mining applications. The output of the research includes: a document mining framework; an analysis of the current condition of document mining in technology-based organisations together with their future requirements; and guidelines for introducing document mining into an organisation along with a discussion on the practical issues that are faced by users. Copyright © 2011 Inderscience Enterprises Ltd.