Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates. An in situ annealing step at high temperature after buffer layer growth improves the surface and structural properties of the buffer layer, which further improves the morphology of the GaAs nanowire growth. Through such optimizations we show that vertically aligned GaAs nanowires can be fabricated on Si(111) substrates and achieve the same structural and optical properties as GaAs nanowires grown directly on GaAs(111)B substrates.

A systematic approach for improving the quality of official statistics: Case of Korean information and telecommunication industry

With the rapid growth of information and communication technology (ICT) in Korea, there was a need to improve the quality of official ICT statistics. In order to do this, various factors had to be considered, such as the quality of surveying, processing, and output as well as the reputation of the statistical agency. We used PLS estimation to determine how these factors might influence customer satisfaction. Furthermore, through a comparison of associated satisfaction indices, we provided feedback to the responsible statistics agency. It appears that our model can be used as a tool for improving the quality of official ICT statistics. © 2008 Elsevier B.V. All rights reserved.