Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.

Self-aligned high-resolution printed polymer transistors

A process to fabricate solution-processable thin-film transistors (TFTs) with a one-step self-aligned definition of the dimensions in all functional layers is demonstrated. The TFT-channel, semiconductor materials, and effective gate dimention of different layers are determined by a one-step imprint process and the subsequent pattern transfer without the need for multiple patterning and mask alignment. The process is compatible with fabrication of large-scale circuits. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing

Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

Electrical/optical dual-function redox potential transistor

We demonstrate a new type of transistors, the electrical/optical "dual-function redox-potential transistors", which is solution processable and environmentally stable. This device consists of vertically staked electrodes that act as gate, emitter and collector. It can perform as a normal transistor, whilst one electrode which is sensitised by dye enables to generate photocurrent when illuminated. Solution processable oxide-nanoparticles were used to form various functional layers, which allow an electrolyte to penetrate through and, consequently, the current between emitter and collector can be controlled by the gate potential modulated distribution of ions. The result here shows that the device performs with high ON-current under low driving voltage (<1â€...V), while the transistor performance can readily be controlled by photo-illumination. Such device with combined optical and electrical functionalities allows single device to perform the tasks that are usually done by a circuit/system with multiple optical and electrical components, and it is promising for various applications.