Methane chemistry involved in a low-pressure electron cyclotron wave resonant plasma discharg

A low-pressure methane plasma generated by electron cyclotron wave resonance was characterized in terms of electron temperature, plasma density and composition. Methane plasmas were commonly used in the deposition of hydrogenated amorphous carbon thin films. Little variation in the plasma chemistry was observed by mass spectrometry measurements of the gas phase with increasing electron temperature. The results show that direct electron-impact reactions exert greater influence on the plasma chemistry than secondary ion-neutral reactions.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

The contact of rough surfaces carrying pressure sensitive boundary layers

When two rough surfaces are loaded together it is well known that the area of true contact is very much smaller then the geometric area and that, consequently, local contact pressures are very much greater than the nominal value. If the asperities on each surface can be thought of as possessing smooth summits and each of the solids is elastically isotropic then the pressure distribution will consist of a series of small, but severe, Hertzian patches. However, if one of both of the surfaces in question is protected by a boundary layer then both the number and dimensions of these patches, and the form of the pressure distribution within them, will be modified. Recent experimental evidence from studies using both Atomic Force Microscopy and micro-tribometry suggests that boundary films produced by the action of commercial anti-wear additives, such as ZDTP, exhibit mechanical properties, which are affected by local values of pressure. These changes bring about further modifications to local conditions. These effects have been explored in a numerical model of rough surface contact and the implications for the mechanisms of surface distress and wear are discussed. © 2000 Elsevier Science B.V. All rights reserved.

Optical gap in carbon nitride films

In this paper we study the effect of introducing nitrogen into different carbon networks. Two kinds of carbon nitride films were deposited: (a) Using a DC-magnetron sputtering system sp2 bonded carbon nitride (a-CN) films were deposited and (b) Using a combination of filtered cathodic vacuum arc and a low-pressure N2 plasma source, N was introduced into sp3 carbon networks (ta-C), leading to the formation of a more dense CN film named ta-CN. For ta-CN films we found that the optical gap initially decreases as the N content and the sp2 fraction rises, but above a certain N quantity there is a level-off of the value, and the gap then remains constant despite further increases in the fraction and clustering of the sp2 phase. However, for a-CN films the optical gap increases with the nitrogen content. These two different trends are not easily explained using the same framework as that for carbon films, in which any decrease in the band gap is associated to an increase in the sp2 fraction or its clustering. Here we discuss the conditions that lead to high optical gap in sp2-bonded carbon nitride samples, which are clearly not associated to the presence of any crystalline super-hard phase. We also compared other differences in properties observed between the two films, such as deposition rate, infrared and Raman spectra. © 2003 Elsevier Science B.V. All rights reserved.

Velocity distributions for low pressure turbines

A parametric set of velocity distributions has been investigated using a flat plate experiment. Three different diffusion factors and peak velocity locations were tested. These were designed to mimic the suction surfaces of Low Pressure (LP) turbine blades. Unsteady wakes, inherent in real turbomachinery flows, were generated using a moving bar mechanism. A turbulence grid generated a freestream turbulence level that is believed to be typical of LP turbines. Measurements were taken across a Reynolds number range of 50,000-220,000 at three reduced frequencies (0.314, 0.628, 0.942). Boundary layer traverses were performed at the nominal trailing edge using a Laser Doppler Anemometry system and hot-films were used to examine the boundary layer behaviour along the surface. For every velocity distribution tested, the boundary layer separated in the diffusing flow downstream of the peak velocity. The loss production is dominated by the mixing in the reattachment process, mixing in the turbulent boundary layer downstream of reattachment and the effects of the unsteady interaction between the wakes and the boundary layer. A sensitive balance governs the optimal location of peak velocity on the surface. Moving the velocity peak forwards on the blade was found to be increasingly beneficial when bubblegenerated losses are high, i.e. at low Reynolds number, at low reduced frequency and at high levels of diffusion. Copyright © 2008 by ASME.

Optical emission spectroscopy of the plasma during sputter deposition of YBCO films for microwave applications

YBCO thin films are currently used in several HTS-based electronics applications. The performance of devices, which may include microwave passive components (filters, resonators), grain boundary junctions or spintronic multilayer structures, is determined by film quality, which in turn depends on the deposition technology used and growth parameters. We report on results from nonintrusive Optical Emission Spectroscopy of the plasma during YBCO thin film deposition in a high-pressure on-axis sputtering system under different conditions, including small trace gas additions to the sputtering gas. We correlate these results with the compositional and structural changes which affect the DC and microwave properties of YBCO films. Film morphology, composition, structure and in- and out-of-plane orientation were assessed; T, and microwave surface resistance measurements were made using inductive and resonator techniques. Comparison was made with films sputtered in an off-axis 2-opposing magnetron system.

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.