Top down scale-up of semiconducting nanostructures for large area electronics

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme. © 2014 IEEE.

Optical emission spectroscopy of the plasma during sputter deposition of YBCO films for microwave applications

YBCO thin films are currently used in several HTS-based electronics applications. The performance of devices, which may include microwave passive components (filters, resonators), grain boundary junctions or spintronic multilayer structures, is determined by film quality, which in turn depends on the deposition technology used and growth parameters. We report on results from nonintrusive Optical Emission Spectroscopy of the plasma during YBCO thin film deposition in a high-pressure on-axis sputtering system under different conditions, including small trace gas additions to the sputtering gas. We correlate these results with the compositional and structural changes which affect the DC and microwave properties of YBCO films. Film morphology, composition, structure and in- and out-of-plane orientation were assessed; T, and microwave surface resistance measurements were made using inductive and resonator techniques. Comparison was made with films sputtered in an off-axis 2-opposing magnetron system.

Plasmonic band gaps and waveguide effects in carbon nanotube arrays based metamaterials.

Highly dense periodic arrays of multiwalled carbon nanotubes behave like low-density plasma of very heavy charged particles, acting as metamaterials. These arrays with nanoscale lattice constants can be designed to display extended plasmonic band gaps within the optical regime, encompassing the crucial optical windows (850 and 1550 nm) simultaneously. We demonstrate an interesting metamaterial waveguide effect displayed by these nanotube arrays containing line defects. The nanotube arrays with lattice constants of 400 nm and radius of 50 nm were studied. Reflection experiments conducted on the nanoscale structures were in agreement with numerical calculations.

Cell adhesion to plasma electrolytic oxidation (PEO) titania coatings, assessed using a centrifuging technique.

The adhesion of bovine chondrocytes and human osteoblasts to three titania-based coatings, formed by plasma electrolytic oxidation (PEO), was compared to that on uncoated Ti-6Al-4V substrates, and some comparisons were also made with plasma sprayed hydroxyapatite (HA) coatings. This was done using a centrifuge, with accelerations of up to 160,000 g, so as to induce buoyancy forces that created normal or shear stresses at the interface. It is shown that, on all surfaces, it was easier to remove cells under normal loading than under shear loading. Cell adhesion to the PEO coatings was stronger than that on Ti-6Al-4V and similar to that on HA. Cell proliferation rates were relatively high on one of the PEO coatings, which was virtually free of aluminium, but low on the other two, which contained significant levels of aluminium. It is concluded that the Al-free PEO coating offers promise for application to prosthetic implants.

On the percussion drilling of SI using a 20W MOPA based YB fiber laser

A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

Plasmonic band gaps and waveguide effects in carbon nanotube arrays based metamaterials

Highly dense periodic arrays of multiwalled carbon nanotubes behave like low-density plasma of very heavy charged particles, acting as metamaterials. These arrays with nanoscale lattice constants can be designed to display extended plasmonic band gaps within the optical regime, encompassing the crucial optical windows (850 and 1550 nm) simultaneously. We demonstrate an interesting metamaterial waveguide effect displayed by these nanotube arrays containing line defects. The nanotube arrays with lattice constants of 400 nm and radius of 50 nm were studied. Reflection experiments conducted on the nanoscale structures were in agreement with numerical calculations.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Band gap opening of graphene after UV/ozone and oxygen plasma treatments

Graphene grown by Chemical Vapor Deposition (CVD) on nickel subsrate is oxidized by means of oxygen plasma and UV/Ozone treatments to introduce bandgap opening in graphene. The degree of band gap opening is proportional to the degree of oxidation on the graphene. This result is analyzed and confirmed by Scanning Tunnelling Microscopy/Spectroscopy and Raman spectroscopy measurements. Compared to conventional wet-oxidation methods, oxygen plasma and UV/Ozone treatments do not require harsh chemicals to perform, allow faster oxidation rates, and enable site-specific oxidation. These features make oxygen plasma and UV/Ozone treatments ideal candidates to be implemented in high-throughput fabrication of graphene-based microelectronics. © 2011 Materials Research Society.