Component level strategies for exploiting the lifespan of steel in products

Approximately 40% of annual demand for steel worldwide is used to replace products that have failed. With this percentage set to rise, extending the lifespan of steel in products presents a significant opportunity to reduce demand and thus decrease carbon dioxide emissions from steel production. This article presents a new, simplified framework with which to analyse product failure. When applied to the products that dominate steel use, this framework reveals that they are often replaced because a component/sub-assembly becomes degraded, inferior, unsuitable or worthless. In light of this, four products, which are representative of high steel content products in general, are analysed at the component level, determining steel mass and cost profiles over the lifespan of each product. The results show that the majority of the steel components are underexploited - still functioning when the product is discarded; in particular, the potential lifespan of the steel-rich structure is typically much greater than its actual lifespan. Twelve case studies, in which product or component life has been increased, are then presented. The resulting evidence is used to tailor life-extension strategies to each reason for product failure and to identify the economic motivations for implementing these strategies. The results suggest that a product template in which the long-lived structure accounts for a relatively high share of costs while short-lived components can be easily replaced (offering profit to the producer and enhanced utility to owners) encourages product life extension. © 2013 The Author.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.