20 resultados para Phase Type Distribution

em Cambridge University Engineering Department Publications Database


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This study characterizes the interaction between Campylobacter jejuni and the 16 phages used in the United Kingdom typing scheme by screening spontaneous mutants of the phage-type strains and transposon mutants of the sequenced strain NCTC 11168. We show that the 16 typing phages fall into four groups based on their patterns of activity against spontaneous mutants. Screens of transposon and defined mutants indicate that the phage-bacterium interaction for one of these groups appears to involve the capsular polysaccharide (CPS), while two of the other three groups consist of flagellatropic phages. The expression of CPS and flagella is potentially phase variable in C. jejuni, and the implications of these findings for typing and intervention strategies are discussed.

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Campylobacter jejuni is a prevalent cause of food-borne diarrhoeal illness in humans. Understanding of the physiological and metabolic capabilities of the organism is limited. We report a detailed analysis of the C. jejuni growth cycle in batch culture. Combined transcriptomic, phenotypic and metabolic analysis demonstrates a highly dynamic 'stationary phase', characterized by a peak in motility, numerous gene expression changes and substrate switching, despite transcript changes that indicate a metabolic downshift upon the onset of stationary phase. Video tracking of bacterial motility identifies peak activity during stationary phase. Amino acid analysis of culture supernatants shows a preferential order of amino acid utilization. Proton NMR (1H-NMR) highlights an acetate switch mechanism whereby bacteria change from acetate excretion to acetate uptake, most probably in response to depletion of other substrates. Acetate production requires pta (Cj0688) and ackA (Cj0689), although the acs homologue (Cj1537c) is not required. Insertion mutants in Cj0688 and Cj0689 maintain viability less well during the stationary and decline phases of the growth cycle than wild-type C. jejuni, suggesting that these genes, and the acetate pathway, are important for survival.

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Using numerical micromagnetics we have studied the ground state magnetization distribution of square planar ferromagnetic elements ("nanostructures"). As the element size is reduced from 250 to 2 nm at constant thickness (2-35 nm), we find that the magnetization distribution undergoes up to three phase transitions involving as many as three different near single domain states. One of these phase transitions is analogous to the reorientation phase transition observed in continuous ultrathin magnetic films. © 1998 American Institute of Physics.

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We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

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Strong, artificial pinning centres are required in superconducting films of large thickness for power applications in high magnetic fields. One of the methods for the introduction of pinning centres in such films is substrate decoration, i.e., growing nanoscale islands of certain materials on the substrate prior to the deposition of the superconducting film. Two other methods are building up a layered distribution of a second phase and homogeneous incorporation of second phase inclusions from a compositional target. In this paper, we compare the effectiveness of these methods in terms of the type of the self-assembly of nanoparticles. The comparison is made over a large set of YBa2Cu3O7 films of thickness up to 6.6 μm deposited with Au, Ag, Pd, LaNiO3, PrBa2Cu 3O7, YBCO, BaZrO3 and Gd2Ba 4CuWOy nanoparticles. It is found that substrate-decoration self-assembly is able to provide higher critical current in low magnetic field than the incorporation of homogeneous second phase in the sample microstructure. By specific modification of substrate decoration we achieved the self-field critical current per centimetre of width of 896 A/cm at 77.3 K and 1620 A/cm at 65 K in a film of thickness of 4.8 μm. © 2010 IOP Publishing Ltd.

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With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

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This paper proposed a novel control scheme for operating the Single Phase Brushless Doubly-Fed Machine (SPB) based on Stator-Flux-Oriented control algorithm. The SPB is a new type of Brushless Doubly-Fed Machine (BDFM) which shows a potential in applications which require adjustable speed such as Wind Power generation and speed adjustable Drive. The SPB can be applied to single-phase power system and the lower cost of the SPB makes the SPB suitable for low-rated power conversion applications. This paper develops the control scheme of the SPB with explicit mathematical analysis and block diagram of the controller. Experimental verification is also given. © 2011 IEEE.

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We demonstrate that surface stresses in epitaxially grown VO₂ nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M₂ phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M1 phase to a metallic R phase, the coexistence of insulating M₁ and M₂ phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO₂ NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO₂ NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.

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As a variation of the thermally actuated flux pump and the linear type magnetic flux pump (LTMFP), the circular type magnetic flux pump (CTMFP) device is proposed to magnetize a circular shape type-II superconducting thin film and bulk. The basic concept is the same as the thermally actuated flux pump: a circularly symmetric traveling magnetic field is generated below a circular shape superconductor to increase its trapping field. However, this traveling field is created by the three phase windings instead of heating gadolinium block. Apart from the LTMFP, the three phase windings are wound concentrically instead of linearly. The speed of the traveling field is controlled by the AC frequency and the magnitude of the field is controlled by the magnitudes of AC currents. In addition, a coil with DC current is wound around the three phase windings to provide a background field. The concept design is presented in this paper. The magnetic waveforms are analysed numerically by the COMSOL 3.5a software. The impedances of the three phase windings are calculated and a corresponding circuit design is presented. This rig can be used as an advanced tool to study the flux pump behavior of a circular shape superconductor. © 2002-2011 IEEE.

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A circular-type magnetic flux pump (CTMFP) device was built to study the flux dynamics on a 2-inch-diameter YBCO thin film. This CTMFP is composed of two CTMFP coils, with each CTMFP coil containing concentric three-phase windings and a dc winding. We connected the three-phase windings to the output of a commercial inverter. By changing the output frequency of the inverter, the sweeping speed of the circular-shaped travelling magnetic wave can be changed. The connection of the phase coils follows the forward consequence, so that the circular-shaped travelling magnetic wave travels inward to the center. The output frequency f was changed from f = 0.01 to 1000.0 Hz. The YBCO sample was sandwiched between the two CTMFP coils to experience the circular-shaped travelling magnetic wave. It was found that the increase of the flux density in the center of the film is independent of the sweeping frequency. In high frequency f = 1000.0Hz, even if the waveform had changed a lot, the increment is still the same as in low frequencies. © 2012 IEEE.

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The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650°C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF 4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. © 2012 American Institute of Physics.

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LiMn2-xTixO4 compounds with 0 ≤ x ≤ 1 were prepared by solid state reaction and Pechini technique. Powder X-ray diffraction showed that all samples crystallize with the spinel crystal structure (S.G. Fd3-m). The cubic unit-cell parameter increases with the Ti content. The influence of the Ti content and cationic distribution on the magnetic properties of the compounds was studied by measuring the temperature and magnetic field dependences of the magnetization: substitution by non-magnetic d0 Ti4+ ions appeared to weaken the magnetic interactions between the manganese ions. The electrical properties of LiMnTiO4 were studied by AC impedance spectroscopy and DC polarisation measurements, which revealed the electronic character of the conduction process. © 2006 Elsevier B.V. All rights reserved.