Comparison of stabilised/solidified mixes of model drill cuttings based on the North Sea and Red Sea Areas

Following the global stringent legislations regulating the wastes generated from the drilling process of oil exploration and production activities, the management of hazardous drill cuttings has become one of the pressing needs confronting the petroleum industry. Most of the prevalent treatment techniques adopted by oil companies are extremely expensive and/or the treated product has to be landfilled without any potential end-use; thereby rendering these solutions unsustainable. The technique of stabilisation/solidification is being investigated in this research to treat drill cuttings prior to landfilling or for potential re-use in construction products. Two case studies were explored namely North Sea and Red Sea. Given the known difficulties with stabilising/solidifying oils and chlorides, this research made use of model drill cutting mixes based on typical drill cutting from the two case studies, which contained 4.2% and 10.95% average concentrations of hydrocarbons; and 2.03% and 2.13% of chlorides, by weight respectively. A number of different binders, including a range of conventional viz. Portland cement (PC) as well as less-conventional viz. zeolite, or waste binders viz. cement kiln dust (CKD), fly ash and compost were tested to assess their ability to treat the North Sea and Red Sea model drill cuttings. The dry binder content by weight was 10%, 20% and 30%. In addition, raw drill cuttings from one of the North Sea offshore rigs were stabilised/solidified using 30% PC. The characteristics of the final stabilised/solidified product were finally compared to those of thermally treated cuttings. The effectiveness of the treatment using the different binder systems was compared in the light of the aforementioned two contaminants only. A set of physical tests (unconfined compressive strength (UCS)), chemical tests (NRA leachability) and micro-structural examinations (using scanning electron microscopy (SEM), and X-ray diffraction (XRD)) were used to evaluate the relative performance of the different binder mixes in treating the drill cuttings. The results showed that the observed UCS covered a wide range of values indicating various feasible end-use scenarios for the treated cuttings within the construction industry. The teachability results showed the reduction of the model drill cuttings to a stable non-reactive hazardous waste, compliant with the UK acceptance criteria for non-hazardous landfills: (a) by most of the 30% and 20% binders for chloride concentrations, and (b) by the 20% and 30% of compost-PC and CKD-PC binders for the Red Sea cuttings. The 20% and 30% compost-PC and CKD-PC binders successfully reduced the leached oil concentration of the North Sea cuttings to inert levels. Copyright 2007, Society of Petroleum Engineers.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photo luminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. (c) 2006 Elsevier B.V. All rights reserved.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.