8 resultados para Oxyde d’indium dopé à l’étain (ITO)

em Cambridge University Engineering Department Publications Database


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There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.

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In this work we present a flexible Electrostatic Tactile (ET) surface/display realized by using new emerging material graphene. The graphene is transparent conductor which successfully replaces previous solution based on indium-thin oxide (ITO) and delivers more reliable solution for flexible and bendable displays. The electrostatic tactile surface is capable of delivering programmable, location specific tactile textures. The ET device has an area of 25 cm 2, and consists of 130 μm thin optically transparent (>76%) and mechanically flexible structure overlaid unobtrusively on top of a display. The ET system exploits electro vibration phenomena to enable on-demand control of the frictional force between the user's fingertip and the device surface. The ET device is integrated through a controller on a mobile display platform to generate fully programmable range of stimulating signals. The ET haptic feedback is formed in accordance with the visual information displayed underneath, with the magnitude and pattern of the frictional force correlated with both the images and the coordinates of the actual touch in real time forming virtual textures on the display surface (haptic virtual silhouette). To quantify rate of change in friction force we performed a dynamic friction coefficient measurement with a system involving an artificial finger mimicking the actual touch. During operation, the dynamic friction between the ET surface and an artificial finger stimulation increases by 26% when the load is 0.8 N and by 24% when the load is 1 N. © 2012 ACM.

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Heterojunction is an important structure for the development of photovoltaic solar cells. In contrast to homojunction structures, heterojunction solar cells have internal crystalline interfaces, which will reflect part of the incident light, and this has not been considered carefully before though many heterostructure solar cells have been commercialized. This paper discusses the internal reflection for various material systems used for the development of heterostructure-based solar cells. It has been found that the most common heterostructure solar cells have internal reflection less than 2%, while some potential heterojunction solar cells such as ITO/GaAs, ITO/InP, Si/Ge, polymer/semiconductors and oxide semiconductors may have internal reflection as high as 20%. Also it is worse to have a window layer with a lower refractive index than the absorption layer for solar cells. Ignoring this strong internal reflection will lead to severe deterioration and reduction of conversion efficiency; therefore measures have to be taken to minimize or prevent this internal reflection. © 2013 Elsevier B.V.

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In [5] it was shown that, for a standard quarter-car vehicle model and a road disturbance whose velocity profile is white noise of intensity A, the mean power dissipated in the suspension is equal to kA/2 where k is the tyre vertical stiffness. It is remarkable that the power dissipation turns out to be independent of all masses and suspension parameters. The proof in [5] makes use of a spectral formulation of white noise and is specific to linear systems. This paper casts the result in a more general form and shows that it follows from a simple application of Ito calculus. © 2012 IEEE.

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We report the fabrication of a mechanically-flexible 16×16 array of thin-film, micron-size LEDs emitting at 480 nm. Devices were transfer-printed onto a mechanically-flexible ITO backplane using a modified, high-precision (placement accuracy ±25 nm) assembly system. © 2013 IEEE.

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Roll-to-roll (R2R) gravure exhibits significant advantages such as high precision and throughput for the printing of photoactive and conductive materials and the fabrication of flexible organic electronics such as organic photovoltaics (OPVs). Since the photoactive layer is the core of the OPV, it is important to investigate and finally control the process parameters and mechanisms that define the film morphology in a R2R process. The scope of this work is to study the effect of the R2R gravure printing and drying process on the nanomorphology and nanostructure of the photoactive P3HT:PCBM thin films printed on PEDOT:PSS electrodes towards the fabrication of indium tin oxide (ITO)-free flexible OPVs. In order to achieve this, P3HT:PCBM blends of different concentration were R2R printed under various speeds on the PEDOT:PSS layers. Due to the limited drying time during the rolling, an amount of solvent remains in the P3HT:PCBM films and the slow-drying process takes place which leads to the vertical and lateral phase separation, according to the Spectroscopic Ellipsometry and Atomic Force Microscopy analysis. The enhanced slow-drying leads to stronger phase separation, larger P3HT crystallites according to the Grazing Incidence X-Ray Diffraction data and to weaker mechanical response as it was shown by the nanoindentation creep. However, in the surface of the films the P3HT crystallization is controlled by the impinged hot air during the drying, where the more the drying time the larger the surface P3HT crystallites. The integration of the printed P3HT:PCBM and PEDOT:PSS layers in an OPV device underlined the feasibility of fabricating ITO-free flexible OPVs by R2R gravure processes. © 2013 Elsevier B.V.

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In the present work we compare the performance of organic solar cells, based on the bulk heterojunction system of P3HT:PCBM when adequate silver nanoparticles (NPs) are incorporated in two distinct places among the device structure. Introduction of NPs on top of the transparent anode revealed better overall performance with an increased efficiency of 17%. Alternatively, placing the NPs on top of the active photovoltaic layer resulted to 25% higher photo-current generation albeit with inferior electrical characteristics (i.e series and shunt resistance). Our findings suggest that enhanced scattering to non-specular directions from NPs site is maximized when penetrating light meets the particles after the polymer blend, but even this mechanism is not sufficient enough to explain the enhanced short circuit current observed. A second mechanism should be feasible; that is plasmon enhancement which is more efficient in the case where NPs are in direct contact with the polymer blend. J-V characteristics measured in the dark showed that NPs placed on top of the ITO film act as enhanced hole conducting sites, as evident by the lower series resistance values in these cells, suggesting this mechanism as more significant in this case. © 2012 Elsevier B.V. All rights reserved.

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We compare the performance of a typical hole transport layer for organic photovoltaics (OPVs), Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) thin film with a series of PEDOT:PSS layers doped with silver (Ag) nanoparticles (NPs) of various size distributions. These hybrid layers have attracted great attention as buffer layers in plasmonic OPVs, although there is no report up to date on their isolated performance. In the present study we prepared a series of PEDOT:PSS layers sandwiched between indium tin oxide (ITO) and gold (Au) electrodes. Ag NPs were deposited on top of the ITO by electron beam evaporation followed by spin coating of PEDOT:PSS. Electrical characterization performed in the dark showed linear resistive behavior for all the samples; lower resistance was observed for the hybrid ones. It was found that the resistivity of the samples decreases with increasing the particle's size. A substantial increase of the electric field between the ITO and the Au electrodes was seen through the formation of current paths through the Ag NPs. A striking observation is the slight increase in the slope of the current density versus voltage curves when measured under illumination for the case of the plasmonic layers, indicating that changes in the electric field in the vicinity of the NP due to plasmonic excitation is a non-vanishing factor. © 2014 Published by Elsevier B.V. All rights reserved.