Excellent oxidation endurance of boron nitride nanotube field electron emitters

Boron nitride nanotubes (BNNTs) are considered as a promising cold electron emission material owing to their negative electron affinity. BNNT field emitters show excellent oxidation endurance after high temperature thermal annealing of 600 °C in air ambient. There is no damage to the BNNTs after thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. The thermally annealed BNNTs exhibit a high maximum emission current density of 8.39mA/cm2 and show very robust emission stability. The BNNTs can be a promising emitter material for field emission devices under harsh oxygen environments. © 2014 AIP Publishing LLC.

Kinetics of the chemical looping oxidation of H2 by a co-precipitated mixture of CuO and Al2O3

Chemical-looping combustion (CLC) has the inherent property of separating CO2 from flue gases. Instead of air, it uses an oxygen-carrier, usually in the form of a metal oxide, to provide oxygen for combustion. When used for the combustion of gaseous fuels, such as natural gas, or synthesis gas from the gasification of coal, the technique gives a stream of CO2 which, on an industrial scale, would be sufficiently pure for geological sequestration. An important issue is the form of the metal oxide, since it must retain its reactivity through many cycles of complete reduction and oxidation. Here, we report on the rates of oxidation of one constituent of synthesis gas, H2, by co-precipitated mixtures of CuO+Al2O3 using a laboratory-scale fluidised bed. To minimise the influence of external mass transfer, and also of errors in the measurement of [H2], particles sized to 355-500μm were used at low [H2], with the temperature ranging from 450 to 900°C. Under such conditions, the reaction was slow enough for meaningful measurements of the intrinsic kinetics to be made. The reaction was found to be first order with respect to H2. Above ∼800°C, the reaction of CuO was fast and conformed to the shrinking core mechanism, proceeding via the intermediate, Cu2O, in: 2CuO+H2→Cu2O+H2O, ΔH1073 K0=- 116.8 kJ/mol; Cu2O+H2→2Cu+H2O, ΔH1073 K0-80.9 kJ/mol. After oxidation of the products Cu and Cu2O back to CuO, the kinetics in subsequent cycles of chemical looping oxidation of H2 could be approximated by those in the first. Interestingly, the carrier was found to react at temperatures as low as 300°C. The influence of the number of cycles of reduction and oxidation is explored. Comparisons are drawn with previous work using reduction by CO. Finally, these results indicate that the kinetics of reaction of the oxygen carrier with gasifier synthesis gases is very much faster than rates of gasification of the original fuel. © 2010 The Institution of Chemical Engineers.

Cell adhesion to plasma electrolytic oxidation (PEO) titania coatings, assessed using a centrifuging technique.

The adhesion of bovine chondrocytes and human osteoblasts to three titania-based coatings, formed by plasma electrolytic oxidation (PEO), was compared to that on uncoated Ti-6Al-4V substrates, and some comparisons were also made with plasma sprayed hydroxyapatite (HA) coatings. This was done using a centrifuge, with accelerations of up to 160,000 g, so as to induce buoyancy forces that created normal or shear stresses at the interface. It is shown that, on all surfaces, it was easier to remove cells under normal loading than under shear loading. Cell adhesion to the PEO coatings was stronger than that on Ti-6Al-4V and similar to that on HA. Cell proliferation rates were relatively high on one of the PEO coatings, which was virtually free of aluminium, but low on the other two, which contained significant levels of aluminium. It is concluded that the Al-free PEO coating offers promise for application to prosthetic implants.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.

A Stochastic Model for Electron Multiplication Charge-Coupled Devices - From Theory to Practice

Electron multiplication charge-coupled devices (EMCCD) are widely used for photon counting experiments and measurements of low intensity light sources, and are extensively employed in biological fluorescence imaging applications. These devices have a complex statistical behaviour that is often not fully considered in the analysis of EMCCD data. Robust and optimal analysis of EMCCD images requires an understanding of their noise properties, in particular to exploit fully the advantages of Bayesian and maximum-likelihood analysis techniques, whose value is increasingly recognised in biological imaging for obtaining robust quantitative measurements from challenging data. To improve our own EMCCD analysis and as an effort to aid that of the wider bioimaging community, we present, explain and discuss a detailed physical model for EMCCD noise properties, giving a likelihood function for image counts in each pixel for a given incident intensity, and we explain how to measure the parameters for this model from various calibration images. © 2013 Hirsch et al.

Numerical simulation of post-flame oxidation of hydrocarbons in spark ignition engines

About 50-90 percent of the hydrocarbons that escape combustion during flame passage in spark-ignition engine operation are oxidized in the cylinder before leaving the system. The process involves the transport of unreacted fuel from cold walls towards the hotter burned gas regions and subsequent reaction. In order to understand controlling factors in the process, a transient one-dimensional reactive-diffusive model has been formulated for simulating the oxidation processes taking place in the reactive layer between hot burned gases and cold unreacted air/fuel mixture, with initial and boundary conditions provided by the emergence of hydrocarbons from the piston top land crevice. Energy and species conservation equations are solved for the entire process, using a detailed chemical kinetic mechanism for propane. Simulation results show that the post-flame oxidation process takes place within a reactive layer where intermediate hydrocarbon products are formed at temperatures above 1100-1200 K, followed by a carbon monoxide conversion region closer to the hot burned gases. Model results show that most of hydrocarbons leaving the crevice are completely oxidized inside the cylinder. The largest contribution of remaining hydrocarbons are those leaving the crevice at temperatures below 1400 K. The largest fraction of non-fuel (intermediate) hydrocarbons results from hydrocarbons leaving the crevice when core temperatures are around 1400 K Copyright © 1997 Society of Automotive Engineers, Inc.

Electron-beam-induced direct etching of graphene

We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.

Novel nanostructured carbon nanotube electron sources

In this chapter, we present a review of our continuing efforts toward the development of discrete, low-dimensional nanostructured carbon-based electron emitters. Carbon nanotubes and nanofibers, herein referred to simply as CNTs, are one-dimensional carbon allotropes formed from cylindrically rolled and nested graphene sheets, have diameters between 1 and 500 nm and lengths of up to several millimeters, and are perfect candidates for field emission (FE) applications. By virtue of their extremely strong sp2 C-C bonding, intrinsic to the graphene hexagonal lattice, CNTs have demonstrated impressive chemical inertness, unprecedented thermal stabilities, significant resistance to electromigration, and exceptionally high axial current carrying capacities, even at elevated temperatures. These near ideal cold cathode electron emitters have incredibly high electric field enhancing aspect ratios combined with virtual point sources of the order of a few nanometers in size. The correct integration and judicious development of suitable FE platforms based on these extraordinary molecules is critical and will ultimately enable enhanced technologies. This chapter will review some of the more recent platforms, devices and structures developed by our group, as well as our contributions towards the development of industry-scalable technologies for ultra-high-resolution electron microscopy, portable x-ray sources, and flexible environmental lighting technologies. © 2012 by Pan Stanford Publishing Pte. Ltd. All rights reserved.

Effects of electron-electron interactions on the electronic Raman scattering of graphite in high magnetic fields

We report the observation of strongly temperature (T)-dependent spectral lines in electronic Raman-scattering spectra of graphite in a high magnetic field up to 45 T applied along the c axis. The magnetic field quantizes the in-plane motion, while the out-of-plane motion remains free, effectively reducing the system dimension from 3 to 1. Optically created electron-hole pairs interact with, or shake up, the one-dimensional Fermi sea in the lowest Landau subbands. Based on the Tomonaga-Luttinger liquid theory, we show that interaction effects modify the spectral line shape from (ω-Δ)-1/2 to (ω-Δ)2α-1/2 at T = 0. At finite T, we predict a thermal broadening factor that increases linearly with T. Our model reproduces the observed T-dependent line shape, determining the electron-electron interaction parameter α to be ∼0.05 at 40 T. © 2014 American Physical Society.