Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Control of aircraft in the terminal manoeuvring area using parallelised sequential Monte Carlo

This paper reports on the use of a parallelised Model Predictive Control, Sequential Monte Carlo algorithm for solving the problem of conflict resolution and aircraft trajectory control in air traffic management specifically around the terminal manoeuvring area of an airport. The target problem is nonlinear, highly constrained, non-convex and uses a single decision-maker with multiple aircraft. The implementation includes a spatio-temporal wind model and rolling window simulations for realistic ongoing scenarios. The method is capable of handling arriving and departing aircraft simultaneously including some with very low fuel remaining. A novel flow field is proposed to smooth the approach trajectories for arriving aircraft and all trajectories are planned in three dimensions. Massive parallelisation of the algorithm allows solution speeds to approach those required for real-time use.