High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.

Carbon onions: Carriers of the 217.5 nm interstellar absorption feature

The UV-VIS characteristics of carbon ions fabricated by an arch discharge in water or liquid nitrogen show characteristics that are similar to the interstellar absorption feature. Thus, high purity and well separated carbon onion samples prepared by annealing the as-fabricated powder in air at 600°C for 60 showed a constant absorption peak at 4.6 μm-1 with a variable width ranging from 1.2-1.6 μm-1. In addition to the UV-VIS data, the origin of the absorption feature at 4.6 μm-1 in carbon onions can be attributed to the collective excitations of π plasmons.