Large port count high-speed optical switch fabric for use within datacenters [Invited]

This paper reviews advances in the technology of integrated semiconductor optical amplifier based photonic switch fabrics, with particular emphasis on their suitability for high performance network switches for use within a datacenter. The key requirements for large port count optical switch fabrics are addressed noting the need for switches with substantial port counts. The design options for a 16×16 port photonic switch fabric architecture are discussed and the choice of a Clos-tree design is described. The control strategy, based on arbitration and scheduling, for an integrated switch fabric is explained. The detailed design and fabrication of the switch is followed by experimental characterization, showing net optical gain and operation at 10 Gb/s with bit error rates lower than 10-9. Finally improvements to the switch are suggested, which should result in 100 Gb/s per port operation at energy efficiencies of 3 pJ/bit. © 2011 Optical Society of America.

Gain-enhanced optical coherence in a high optical gain semiconductor

The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

Colourless adaptively modulated optical OFDM transmitters using SOAs as intensity modulators.

The wavelength dependent transmission performance of adaptively modulated optical OFDM (AMOOFDM) signals is investigated, for the first time, over optical amplification- and chromatic dispersion compensation-free IMDD SMF systems using semiconductor optical amplifiers (SOAs) as intensity modulators. A theoretical SOA model describing both optical gain saturation and gain spectral dynamics is developed, based on which optimum SOA operating conditions are identified for various wavelengths varying in a broad range of 1510 nm- 1590 nm. Results show that, SOA intensity modulators operating at the identified optimum conditions enable the realization of colourless AMOOFDM transmitters within the aforementioned wavelength window. Such transmitters are capable of supporting >30 Gb/s signal transmission over 60 km SMFs.

Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

BISTABLE PERFORMANCE OF CLOSELY COUPLED TWIN STRIPE LASERS.

Results are given for bistable effects in closely coupled twin stripe lasers. These devices use controlled adjustment of asymmetric transverse optical gain to obtain bistability. Various bistable effects have been observed. Initially the authors reported a large light/current hysteresis loop obtained as the drive current to the laser was raised and lowered. Information concerning the bistable mechanisms was then obtained by applying small current pulses into each stripe. It was thus found that bistability was involved with the switching from one stable laser waveguiding mechanism to another. More recently the experimental measurement system has been much improved. Through the use of computer control of motorised micromovements and computer controlled data management, time resolved near and far field, and charge carrier concentration distribution measurements have been more accurately carried out. The paper will outline briefly this system, and report on how it has helped to reveal new mechanisms of bistability in twin stripe lasers.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 leads to suppression of phase re-laxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron-hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron - hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.