Embodied Energy and Gas Emissions of Retaining Wall Structures

The embodied energy (EE) and gas emissions of four design alternatives for an embankment retaining wall system are analyzed for a hypothetical highway construction project. The airborne emissions considered are carbon dioxide (CO 2), methane (CH 4), nitrous oxide (N 2O), sulphur oxides (SO X), and nitrogen oxides (NO X). The process stages considered in this study are the initial materials production, transportation of construction machineries and materials, machinery operation during installation, and machinery depreciations. The objectives are (1) to determine whether there are statistically significant differences among the structural alternatives; (2) to understand the relative proportions of impacts for the process stages within each design; (3) to contextualize the impacts to other aspects in life by comparing the computed EE values to household energy consumption and car emission values; and (4) to examine the validity of the adopted EE as an environmental impact indicator through comparison with the amount of gas emissions. For the project considered in this study, the calculated results indicate that propped steel sheet pile wall and minipile wall systems have less embodied energy and gas emissions than cantilever steel tubular wall and secant concrete pile wall systems. The difference in CO 2 emission for the retaining wall of 100 m length between the most and least environmentally preferable wall design is equivalent to an average 2.0 L family car being driven for 6.2 million miles (or 62 cars with a mileage of 10,000 miles/year for 10 years). The impacts in construction are generally notable and careful consideration and optimization of designs will reduce such impacts. The use of recycled steel or steel pile as reinforcement bar is effective in reducing the environmental impact. The embodied energy value of a given design is correlated to the amount of gas emissions. © 2011 American Society of Civil Engineers.

Analysis of high pressure premixed flames using Equivalent Reactor Networks for predicting NOx emissions

This paper describes a computational study of lean premixed high pressure methane-air flames, using Computational Fluid Dynamics (CFD) together with a reactor network approach. A detailed chemical reaction mechanism is employed to predict pollutant concentrations, placing emphasis on nitrogen oxide emissions. The reacting flow field is divided into separate zones in which homogeneity of the physical and chemical conditions prevails. The defined zones are interconnected forming an Equivalent Reactor Network (ERN). Three flames are examined for which experimental data is available. Flame A is characterised by an equivalence ratio of 0.43 while Flames B and C are richer with equivalence ratios of 0.5 and 0.56 respectively. Computations are performed for a range of operating conditions, quantifying the effect in the emitted NOx levels. Model predictions are compared against the available experimental data. Sensitivity analysis is performed to investigate the effect of the network size, in order to define the optimum number of reactors for accurate predictions of the species mass fractions. © 2012 Elsevier Ltd. All rights reserved.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.