Seeded infiltration and growth of bulk YBCO nano-composites

The seeded infiltration and growth (SIG) technique offers near-net shape processing of bulk superconductors with significant improvement in reduced Y2BaCuO5 (Y-211) inclusion size, reduced shrinkage, reduced porosity and improved current density compared to samples fabricated by top seeded melt growth (TSMG). Y2Ba4CuMOy phases where M=Nb, Mo, W, Ta, etc., have been shown to form nano-scale inclusions in the YBa2Cu3Oy (Y-123) phase matrix and to contribute to enhanced magnetic flux pinning in these materials. In this paper, we describe the introduction of Y2Ba 4CuWOy nano-scale inclusions into bulk superconductors processed by the seeded infiltration growth process. Critical current density, Jc, in excess of 105 A/cm2 at 77 K in self-field is observed for samples containing Y2Ba 4CuWOy. © 2011 IEEE.

Growth rate of YBCO single grains containing Y-2411(M)

Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for a variety of engineering applications, and research on the processing and properties of this material has attracted world-wide interest. In particular, the introduction of flux pinning centres to the large grain microstructure to improve its current density, Jc, and hence trapped field, has been investigated extensively over the past decade. Y 2Ba4CuMOx [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been reported to form particularly effective flux pinning centres in YBCO due primarily to its ability to exist as nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. We report an investigation of the growth rate of single YBCO grains containing Y-2411(Bi) phase inclusions and Y2O3. The superconducting properties of these large single grains have been measured specifically to investigate the effect of Y2O3 on broadening the growth window of these materials. © 2010 IOP Publishing Ltd.

Large single grain (RE)-Ba-Cu-O superconductors with nano-phase inclusions

Nano-phase (5-20 nm) particles of YBa2(Cu0.5M 0.6)O6 [where M = Nb, Ta, Mo, W, Zr and Hf] have been introduced successfully into RE-Ba-Cu-O single grain superconductors. A study to enlarge the size of a single grain containing these particles has been carried out involving measurement of the growth rate as a function of YBa 2(Cu0.5M0.6)O6 phase concentration and degree of un-dercooling. The influence of the change in YBa2 (Cu0.8M0.5)O6 concentration on microstructural features is also investigated and the superconducting properties of these large grain superconductors are presented. © 2005 IEEE.

Microstructure and superconducting properties of single grains of Y-Ba-Cu-O containing Y-2411(M) and Y2O3

Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for engineering applications, and research on the processing and properties of this material has attracted interest world-wide over the past 20 years. In particular, the introduction of flux pinning centers to the large grain microstructure to improve its current density Jc, and hence trapped field, has been investigated extensively. Y2Ba 4CuMO2 [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been discovered recently to form very effective flux pinning centers due primarily to its ability to form nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. The addition of Y2O3 to the precursor composition, however, broadens the growth window of single YBCO grains containing Y-2411 (M). We report an investigation of the microstructures and superconducting properties of single grains of this composition grown by top seeded melt growth (TSMG). © 2010 IEEE.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Magneto-transport study of Nb-doped Bi/Pb2223 superconductor

The magneto-transport properties of Bi1.5Pb0.4Nb0.1Sr2Ca2Cu 3O10-x polycrystalline, superconducting ceramic are reported. The material was found to be chemically homogeneous and partially textured. The mixed state properties were investigated by measuring the electrical resistivity, longitudinal and transverse (Nernst effect) thermoelectric power, and thermal conductivity. The magnetization and AC susceptibility measurements were also performed. The variation of these characteristics for magnetic fields up to 5 T are discussed and compared to those of the zero field case. The transport entropy and thermal Hall angle are extracted and quantitatively compared to previously reported data of closely related systems. © 2003 Elsevier Science B.V. All rights reserved.