Two-dimensional Cartesian air-gap element (CAGE) for dynamic finite-element modeling of electrical machines with a flat air gap

This paper extends the air-gap element (AGE) to enable the modeling of flat air gaps. AGE is a macroelement originally proposed by Abdel-Razek et al.for modeling annular air gaps in electrical machines. The paper presents the theory of the new macroelement and explains its implementation within a time-stepped finite-element (FE) code. It validates the solution produced by the new macroelement by comparing it with that obtained by using an FE mesh with a discretized air gap. It then applies the model to determine the open-circuit electromotive force of an axial-flux permanent-magnet machine and compares the results with measurements.

Algorithm for identification in the v-gap metric

This paper suggests a method for identification in the v-gap metric. For a finite number of frequency response samples, a problem for identification in the v-gap metric is formulated and an approximate solution is described. It uses an iterative technique for obtaining an L2-gap approximation. Each stage of the iteration involves solving an LMI optimisation. Given a known stabilising controller and the L2-gap approximation, it is shown how to derive a v-gap approximation.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.