Impact of mode localization on the motional resistance of coupled MEMS resonators

This paper investigates the effect of mode-localization that arises from structural asymmetry induced by manufacturing tolerances in mechanically coupled, electrically transduced Si MEMS resonators. We demonstrate that in the case of such mechanically coupled resonators, the achievable series motional resistance (R x) is dependent not only on the quality factor (Q) but also on the variations in the eigenvector of the chosen mode of vibration induced by mode localization due to manufacturing tolerances during the fabrication process. We study this effect of mode-localization both theoretically and experimentally in two pairs of coupled double-ended tuning fork resonators with different levels of initial structural asymmetry. The measured series R x is minimal when the system is close to perfect symmetry and any deviation from structural symmetry induced by fabrication tolerances leads to a degradation in the effective R x. Mechanical tuning experiments of the stiffness of one of the coupled resonators was also conducted to study variations in R x as a function of structural asymmetry within the system, the results of which demonstrated consistent variations in motional resistance with predictions. © 2012 IEEE.

250 MHz repetition rate monolithically integrated modulated mode-locked semiconductor laser

We present the first monolithically integrated semiconductor pulse source consisting of a mode-locked laser diode, Mach-Zehnder pulse picker, and semiconductor optical amplifier. Pairs of 5.6 ps pulses are generated at a 250 MHz repetition rate. © 2012 OSA.

Variable repetition rate monolithically integrated mode-locked-laser- modulator-MOPA device

A monolithically integrated MLLD-modulator-MOPA is presented generating 12.5 ps pulses. The Mach-Zehnder modulator allows tunable repetition rates from 14 GHz to 109 MHz, and the MOPA boosts the peak power by 3.2 dB. © 2012 IEEE.

Analytical formulation of modal frequency split in the elliptical mode of SCS micromechanical disk resonators

This paper presents an analytical formulation of frequency splitting observed in the elliptical modes of single crystal silicon (SCS) micromechanical disk resonators. Taking the anisotropic elasticity of SCS into account, new formulae for computing modal mass and modal stiffness are first derived for accurate prediction of the modal frequency. The derived results are in good agreement with finite element simulation, showing a factor of 10 improvement in the prediction accuracy as compared to using the formula for the isotropic case. In addition, the analysis successfully explains the effect of anisotropy on the modal frequency splitting of primary elliptical modes, for which the maximum modal displacement is aligned with the directions of maximum (1 1 0) and minimum (1 0 0) elasticity respectively on a (1 0 0) SCS wafer. The measured frequency splitting of other degenerate modes is due to the manufacturing imperfections. © 2014 IOP Publishing Ltd.

20GHz colliding pulse mode-locking of ingaas quantum dot lasers

Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7ps, 20GHz pulses are achieved using an absorber length considerably longer than typically used in similar quantum-well lasers. © 2004 Optical Society of America.