Transmission performance of adaptively modulated optical OFDM modems using subcarrier modulation over SMF IMDD links for access and metropolitan area networks.

Detailed investigations are undertaken, for the first time, of the transmission performance of recently proposed novel Adaptively Modulated Optical OFDM (AMOOFDM) modems using Subcarrier Modulation (AMOOFDM-SCM) in single-channel, SMF-based IMDD links without optical amplification and chromatic dispersion compensation. The cross-talk effect induced by beatings among subcarriers of various types is a crucial factor limiting the maximum achievable AMOOFDM-SCM performance. By applying single sideband modulation and/or spectral gapping to AMOOFDM-SCM, three AMOOFDM-SCM designs of varying complexity are proposed, which achieve >60Gb/s signal transmission over 20 km, 40 km and 60 km. Such performances are >1.5 times higher than those supported by conventional AMOOFDM modems.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.