Symmetrical low voltage ride-through of the Brushless Doubly-Fed Induction Generator

The Brushless Doubly-Fed Induction Generator (BDFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability compared to the Doubly-Fed Induction Generator (DFIG). For the purposes of commercialisation, the BDFIG must meet grid codes at all times. Nowadays, all new wind generators have to ride through certain grid faults, and the Low-Voltage Ride Through (LVRT) capability has become one of the most important points on which to assess the performance a generator. This paper, for the first time, proposes a control scheme to enable the the BDFIG to ride through symmetrical voltage dips. Simulation results and experimental results on a prototype BDFIG show that the proposed scheme gives the capability to ride through low voltage faults. © 2011 IEEE.

Symmetrical low voltage ride-through of a 250 kW Brushless DFIG

The Brushless Doubly-Fed Induction Generator (Brushless DFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability when compared with the conventional Doubly-Fed Induction Generator (DFIG). In the most recent grid codes, wind generators are required to be able to ride through a low voltage fault and meet the reactive current demand from the grid. Hence, a Low-Voltage Ride-Through (LVRT) capability is important for wind generators which are integrated into the grid. In this paper the authors propose a control strategy enabling the Brushless DFIG to successfully ride through a symmetrical voltage dip. The control strategy has been implemented on a 250 kW Brushless DFIG and the experimental results indicate that LVRT is possible without a crowbar.

Asymmetrical low-voltage ride through of brushless doubly fed induction generators for the wind power generation

Compared with the Doubly fed induction generators (DFIG), the brushless doubly fed induction generator (BDFIG) has a commercial potential for wind power generation due to its lower cost and higher reliability. In the most recent grid codes, wind generators are required to be capable of riding through low voltage faults. As a result of the negative sequence, induction generators response differently in asymmetrical voltage dips compared with the symmetrical dip. This paper gave a full behavior analysis of the BDFIG under different types of the asymmetrical fault and proposed a novel control strategy for the BDFIG to ride through asymmetrical low voltage dips without any extra hardware such as crowbars. The proposed control strategies are experimentally verified by a 250-kW BDFIG. © 2012 IEEE.

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.

Low voltage ride-through of DFIG and brushless DFIG: Similarities and differences

The brushless doubly fed induction generator (BDFIG) has been proposed as a viable alternative in wind turbines to the commonly used doubly fed induction generator (DFIG). The BDFIG retains the benefits of the DFIG, i.e. variable speed operation with a partially rated converter, but without the use of brush gear and slip rings, thereby conferring enhanced reliability. As low voltage ride-through (LVRT) performance of the DFIG-based wind turbine is well understood, this paper aims to analyze LVRT behavior of the BDFIG-based wind turbine in a similar way. In order to achieve this goal, the equivalence between their two-axis model parameters is investigated. The variation of flux linkages, back-EMFs and currents of both types of generator are elaborated during three phase voltage dips. Moreover, the structural differences between the two generators, which lead to different equivalent parameters and hence different LVRT capabilities, are investigated. The analytical results are verified via time-domain simulations for medium size wind turbine generators as well as experimental results of a voltage dip on a prototype 250 kVA BDFIG. © 2014 Elsevier B.V.

Crowbarless fault ride-through of the brushless doubly fed induction generator in a wind turbine under symmetrical voltage dips

The brushless doubly fed induction generator (BDFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability when compared with the conventional DFIG. In the most recent grid codes, wind generators are required to be able to ride through a low-voltage fault and meet the reactive current demand from the grid. A low-voltage ride-through (LVRT) capability is therefore important for wind generators which are integrated into the grid. In this paper, the authors propose a control strategy enabling the BDFIG to successfully ride through a symmetrical voltage dip. The control strategy has been implemented on a 250-kW BDFIG, and the experimental results indicate that the LVRT is possible without a crowbar. © 1982-2012 IEEE.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Series-connected IGBTs using active voltage control technique

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV\ce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. © 2012 IEEE.

Experimental LVRT performance of a 250 kW brushless DFIG

Nowadays, all new wind turbine generators have to meet strict grid codes, especially riding through certain grid faults, such as a low voltage caused by grid short circuits. The Low-Voltage Ride Through (LVRT) capability has become a key issue in assessing the performance of wind turbine generators. The mediumspeed Brushless DFIG in combination with a simplified two-stage gearbox shows commercial promise as a replacement for conventional DFIGs due to its lower cost and higher reliability. Furthermore, the Brushless DFIG has significantly improved LVRT performance when compared with the DFIG due to its inherent design characteristics. In this paper, the authors propose a control strategy for the Brushless DFIG to improve its LVRT performance. The controller has been implemented on a prototype 250 kW Brushless DFIG and test results show that LVRT is possible without a need for any external protective hardware such as a crowbar.

Performance analysis and testing of a 250 kW medium-speed brushless doubly-fed induction generator

This study presents the performance analysis and testing of a 250 kW medium-speed brushless doubly-fed induction generator (DFIG), and its associated power electronics and control systems. The experimental tests confirm the design, and showthe system's steady-state and dynamic performance and grid low-voltage ride- through capability. The medium-speed brushless DFIG in combination with a simplified two-stage gearbox promises a low-cost low-maintenance and reliable drivetrain for wind turbine applications. © The Institution of Engineering and Technology 2013.

A study of converter rating for brushless DFIG wind turbines

This paper studies the converter rating requirement of a Brushless Doubly-Fed Induction Generator for wind turbine applications by considering practical constraints such as generator torque-speed requirement, reactive power management and grid low-voltage ride-through (LVRT). Practical data have been used to obtain a realistic system model of a Brushless DFIG wind turbine using steady-state and dynamic models. A converter rating optimization is performed based on the given constraints. The converter current and voltage requirements are examined and the resulting inverter rating is compared to optimization algorithm results. In addition, the effects of rotor leakage inductance on LVRT performance and hence converter rating is investigated.

Methods for enhanced electrical transduction and characterization of micromechanical resonators

This paper details the design and enhanced electrical transduction of a bulk acoustic mode resonator fabricated in a commercial foundry MEMS process utilizing 2.5 μm gaps. The I-V characteristics of electrically addressed silicon resonators are often dominated by capacitive parasitics, inherent to hybrid technologies. This paper benchmarks a variety of drive and detection principles for electrostatically driven square-extensional mode resonators operating in air via analytical models accompanied by measurements of fabricated devices with the primary aim of enhancing the ratio of the motional to feedthrough current at nominal operating voltages. In view of ultimately enhancing the motional to feedthrough current ratio, a new detection technique that combines second harmonic capacitive actuation and piezoresistive detection is presented herein. This new method is shown to outperform previously reported methods utilizing voltages as low as ±3 V in air, providing a promising solution for low voltage CMOS-MEMS integration. To elucidate the basis of this improvement in signal output from measured devices, an approximate analytical model for piezoresistive sensing specific to the resonator topology reported here is also developed and presented. © 2010 Elsevier B.V. All rights reserved.