149 resultados para Light Waves
em Cambridge University Engineering Department Publications Database
Resumo:
Circadian oscillators provide rhythmic temporal cues for a range of biological processes in plants and animals, enabling anticipation of the day/night cycle and enhancing fitness-associated traits. We have used engineering models to understand the control principles of a plant's response to seasonal variation. We show that the seasonal changes in the timing of circadian outputs require light regulation via feed-forward loops, combining rapid light-signaling pathways with entrained circadian oscillators. Linear time-invariant models of circadian rhythms were computed for 3,503 circadian-regulated genes and for the concentration of cytosolic-free calcium to quantify the magnitude and timing of regulation by circadian oscillators and light-signaling pathways. Bioinformatic and experimental analysis show that rapid light-induced regulation of circadian outputs is associated with seasonal rephasing of the output rhythm. We identify that external coincidence is required for rephasing of multiple output rhythms, and is therefore important in general phase control in addition to specific photoperiod-dependent processes such as flowering and hypocotyl elongation. Our findings uncover a fundamental design principle of circadian regulation, and identify the importance of rapid light-signaling pathways in temporal control.
Resumo:
We consider a straight cylindrical duct with a steady subsonic axial flow and a reacting boundary (e.g. an acoustic lining). The wave modes are separated into ordinary acoustic duct modes, and surface modes confined to a small neighbourhood of the boundary. Many researchers have used a mass-spring-damper boundary model, for which one surface mode has previously been identified as a convective instability; however, we show the stability analysis used in such cases to be questionable. We investigate instead the stability of the surface modes using the Briggs-Bers criterion for a Flügge thin-shell boundary model. For modest frequencies and wavenumbers the thin-shell has an impedance which is effectively that of a mass-spring-damper, although for the large wavenumbers needed for the stability analysis the thin-shell and mass-spring-damper impedances diverge, owing to the thin shell's bending stiffness. The thin shell model may therefore be viewed as a regularization of the mass-spring-damper model which accounts for nonlocally-reacting effects. We find all modes to be stable for realistic thin-shell parameters, while absolute instabilities are demonstrated for extremely thin boundary thicknesses. The limit of vanishing bending stiffness is found to be a singular limit, yielding absolute instabilities of arbitrarily large temporal growth rate. We propose that the problems with previous stability analyses are due to the neglect of something akin to bending stiffness in the boundary model. Our conclusion is that the surface mode previously identified as a convective instability may well be stable in reality. Finally, inspired by Rienstra's recent analysis, we investigate the scattering of an acoustic mode as it encounters a sudden change from a hard-wall to a thin-shell boundary, using a Wiener-Hopf technique. The thin-shell is considered to be clamped to the hard-wall. The acoustic mode is found to scatter into transmitted and reflected acoustic modes, and surface modes strongly linked to the solid waves in the boundary, although no longitudinal or transverse waves within the boundary are excited. Examples are provided that demonstrate total transmission, total reflection, and a combination of the two. This thin-shell scattering problem is preferable to the mass-spring-damper scattering problem presented by Rienstra, since the thin-shell problem is fully determined and does not need to appeal to a Kutta-like condition or the inclusion of an instability in order to avoid a surface-streamline cusp at the boundary change.
Resumo:
The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.
Resumo:
Increasing the field of view of a holographic display while maintaining adequate image size is a difficult task. To address this problem, we designed a system that tessellates several sub-holograms into one large hologram at the output. The sub-holograms we generate is similar to a kinoform but without the paraxial approximation during computation. The sub-holograms are loaded onto a single spatial light modulator consecutively and relayed to the appropriate position at the output through a combination of optics and scanning reconstruction light. We will review the method of computer generated hologram and describe the working principles of our system. Results from our proof-of-concept system are shown to have an improved field of view and reconstructed image size. ©2009 IEEE.
Resumo:
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.